MUN5213DW1T1G ON Semiconductor, MUN5213DW1T1G Datasheet - Page 19

• Manufacturer Part Number: MUN5213DW1T1G
• Description: TRANS BRT NPN DUAL 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5213DW1T1G

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 47kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 1
• Rf Transistor Case: SC-88
• No. Of Pins: 6
• Rohs Compliant: Yes
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 80
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MUN5213DW1T1GOSTR

Final Product/Process Change Notification #16266
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MMSZ4696T1G
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MMSZ4698T1G
MMSZ4699T1
MMSZ4699T1G
MMSZ4700T1G
MMSZ4701ET1G
MMSZ4701T1G
MMSZ4702T1
MMSZ4702T1G
MMSZ4703T1G
MMSZ4704T1G
MMSZ4705T1G
MMSZ4706T1G
MMSZ4707T1G
MMSZ4708T1G
MMSZ4709T1G
MMSZ4710T1G
MMSZ4711T1G
MMSZ4713T1G
MMSZ4714T1G
MMSZ4715T1G
MMSZ4717T1G
MMSZ47T1G
MMSZ47T3G
MMSZ4V3T1G
MMSZ4V7T1
MMSZ4V7T1G
MMSZ51T1G
MMSZ5221BT1G
MMSZ5221BT1H
MMSZ5221ET1G
MMSZ5222BT1G
MMSZ5222BT3G
MMSZ5223BT1
MMSZ5223BT1G
MMSZ5223BT1H
MMSZ5223ET1G
MMSZ5225BT1
MMSZ5225BT1G
MMSZ5226BT1G
MMSZ5226BT1H
MMSZ5226BT3G
MMSZ5226ET1G
MMSZ5227BT1G
MMSZ5228BT1G
MMSZ5229BT1G
MMSZ5230BT1
MMSZ5230BT1G
MMSZ5231BT1G
MMSZ5231BT1H
Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 19 of 36