SI8234AB-C-IS Silicon Laboratories Inc, SI8234AB-C-IS Datasheet - Page 6

• Manufacturer Part Number: SI8234AB-C-IS
• Description: 2.5KV 4A HIGH SIDE/LOW SIDE ISOLATED DRIVER ("ISODRIVER"), P
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8234AB-C-IS

• Configuration: High and Low Side, Independent
• Input Type: PWM
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Number Of Outputs: 4
• High Side Voltage - Max (bootstrap): 1500V
• Voltage - Supply: 6.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.50mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si823x
2. Electrical Specifications
Table 1. Electrical Characteristics
4.5 V < VDDI < 5.5 V, VDDA = VDDB = 12 V or 15 V. TA = –40 to +125 °C. Typical specs at 25 °C
6
Parameter
DC Specifications
Input-side Power Supply
Voltage
Driver Supply Voltage
Input Supply Quiescent
Current
Output Supply Quiescent
Current
Input Supply Active Current
Output Supply Active Current
Input Pin Leakage Current
Input Pin Leakage Current
Logic High Input Threshold
Logic Low Input Threshold
Input Hysteresis
Logic High Output Voltage
Logic Low Output Voltage
Output Short-Circuit Pulsed
Sink Current
Output Short-Circuit Pulsed
Source Current
Output Sink Resistance
Output Source Resistance
Notes:
1. VDDA = VDDB = 12 V for 5, 8, and 10 V UVLO devices; VDDA = VDDB = 15 V for 12.5 V UVLO devices.
2. TDD is the minimum overlap time without triggering overlap protection (Si8230/1/3/4 only).
3. The largest RDT resistor that can be used is 220 k.
VDDA, VDDB
VOAL, VOBL
R
IOA(SCH),
IVIA, IVIB,
IDISABLE
IOA(SCL),
IOB(SCH)
ON(SOURCE)
IOB(SCL)
R
IDDA(Q),
IDDB(Q)
Symbol
IDDI(Q)
VOAH,
VI
VOBH
ON(SINK)
IPWM
IDDO
VDDI
IDDI
VIH
VIL
HYST
1
GNDA, and VDDB and GNDB
Voltage between VDDA and
(See “6. Ordering Guide” )
Si8233/4/5/6, Figure 4
Si8233/4/5/6, Figure 5
PWM freq = 500 kHz
PWM freq = 500 kHz
Si8230/1/2, Figure 4
Si8230/1/2, Figure 5
Current per channel
Si8230/32/33/35/36
Rev. 1.1
IOA, IOB = –1 mA
Test Conditions
IOA, IOB = 1 mA
Si8233/4/5/6
Si8233/4/5/6
Si8230/1/2
Si8230/1/2
Si8231/34
/VDDB)
— 0.04
(VDDA
Min
–10
–10
400
4.5
6.5
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Typ
450
2.5
3.6
0.5
4.0
2.0
5.0
1.0
2.7
—
—
—
—
—
—
15
—
—
—
2
2
Max
0.04
+10
+10
5.5
3.0
0.8
24
—
—
—
—
—
—
—
—
—
—
—
—
—
3
3
Units
µA dc
µA dc
mA
mA
mA
mA
mA
mV
V
V
V
V
V
V
A
