EMH2T2R Rohm Semiconductor, EMH2T2R Datasheet
EMH2T2R
Manufacturer Part Number
EMH2T2R
Description
TRANS DUAL NPN 50V 30MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.IMH2AT110.pdf
(3 pages)
Specifications of EMH2T2R
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
68 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Emtnpn/npn
Module Configuration
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating
RoHS Compliant
Module Configuration
Dual
Dc Current Gain Hfe
68
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EMH2T2R
EMH2T2RTR
EMH2T2RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EMH2T2R
Manufacturer:
Rohm Semiconductor
Quantity:
47 400
Company:
Part Number:
EMH2T2R
Manufacturer:
ROHM
Quantity:
9 203
Part Number:
EMH2T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
General purpose (dual digital transistors)
Features
Two DTC144Es chips in a EMT or UMT or SMT package.
1)
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
Inner circuit
Packaging specifications
Absolute maximum ratings (Ta = 25C)
∗
∗
○
Type
EMH2
UMH2N
IMH2A
c
www.rohm.com
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
EMH2 / UMH2N
automatic mounting machines.
EMH2 / UMH2N / IMH2A
DTr
2010 ROHM Co., Ltd. All rights reserved.
2
(3)
(4)
R
R
R
R
1
2
2
=47kΩ
=47kΩ
1
Parameter
(2)
(5)
R
R
1
Package
Code
Basic ordering
unit (pieces)
2
DTr
(1)
(6)
1
EMH2,UMH2N
IMH2A
DTr
IMH2A
2
(4)
(3)
R
R
R
R
1
2
2
=47kΩ
=47kΩ
1
(5)
(2)
R
8000
R
1
T2R
2
−
−
DTr
(6)
(1)
1
Symbol
I
C(Max.)
Tstg
V
V
Pd
I
Tj
Taping
CC
O
3000
IN
TN
−
−
150 (TOTAL)
300 (TOTAL)
T110
3000
1
−55~+150
−
−
and DTr
Limits
−10
100
150
50
40
30
2
.
1/2
Unit
mW
mA
°C
°C
V
V
∗
∗
1
2
Dimensions (Unit : mm)
EMH2
UMH2N
ROHM : EMT6
ROHM : UMT6
EIAJ : SC-88
IMH2A
ROHM : SMT6
EIAJ : SC-74
All terminals have same dimensions
Abbreviated symbol : H2
Abbreviated symbol : H2
0.1Min.
0.3to0.6
Abbreviated symbol : H2
( 4 )
( 5 )
( 6 )
1.25
1.2
1.6
2.1
1.6
2.8
( 3 )
( 2 )
( 1 )
All terminals have same dimensions
All terminals have same dimensions
2010.07 - Rev.B
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EMH2T2R Summary of contents
Page 1
General purpose (dual digital transistors) EMH2 / UMH2N / IMH2A Features Two DTC144Es chips in a EMT or UMT or SMT package Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, ...
Page 2
EMH2 / UMH2N / IMH2A Electrical characteristics (Ta = 25C) Parameter Symbol Min. − V I(off) Input voltage V 3 I(on) − Output voltage V O(on) − Input current I I − Output current I O(off) DC current gain G ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...