UMD9NTR Rohm Semiconductor, UMD9NTR Datasheet - Page 3

• Manufacturer Part Number: UMD9NTR
• Description: TRANS NPN/PNP 50V 70MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMD9NTR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Operating: RoHS Compliant
• Dc Current Gain Hfe: 68
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics curves DTr2 (DTA114Y)
○
EMD9 / UMD9N / IMD9A
c
www.rohm.com
Fig.1 Input voltage vs. output current
500m
200m
100m
500m
200m
100m
20m
10m
50m
2010 ROHM Co., Ltd. All rights reserved.
100
5m
2m
1m
50
20
10
100μ 200μ
100μ 200μ
5
2
1
1
Fig.4 Output voltage vs. output
(ON characteristics)
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
500μ 1m
500μ 1m
Ta=100°C
Ta=−40°C
−40°C
25°C
100°C
2m
2m
25°C
5m 10m 20m 50m 100m
5m 10m 20m 50m 100m
O
O
(A)
(A)
V
l
O
O
/l
=0.3V
I
=20
Fig.2 Output current vs. input voltage
10m
500μ
200μ
100μ
5m
2m
1m
50μ
20μ
10μ
5μ
2μ
1μ
0
(OFF characteristics)
0.5
INPUT VOLTAGE : V
1.0
Ta=100°C
−40°C
1.5
25°C
3/3
2.0
I(off)
(V)
V
2.5
CC
=5V
3.0
500
200
100
50
20
10
1k
5
2
1
100μ 200μ
Fig.3 DC current gain vs. output
V
O
=5V
OUTPUT CURRENT : I
Ta=100°C
current
500μ 1m
−40°C
25°C
2m
5m 10m 20m
2010.01 - Rev.D
O
(A)
Data Sheet
50m 100m