UMG9NTR Rohm Semiconductor, UMG9NTR Datasheet
UMG9NTR
Manufacturer Part Number
UMG9NTR
Description
TRANS DUAL NPN 50V 50MA SOT-353
Manufacturer
Rohm Semiconductor
Datasheet
1.UMG9NTR.pdf
(3 pages)
Specifications of UMG9NTR
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
30
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMG9NTR
Manufacturer:
Rohm
Quantity:
3 509
Part Number:
UMG9NTR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Emitter common
(dual digital transistors)
EMG9 / UMG9N / FMG9A
1) Two DTC114E in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both the DTr
DTr
∗
∗
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
EMG9 / UMG9N
2
DTr
.
R
2
1
(4)
(3)
Parameter
R
2
EMG9, UMG9N
FMG9A
(2)
R
2
(5)
(1)
R
DTr
1
1
R
R
1
2
=10kΩ
=10kΩ
Symbol
I
C (Max.)
Tstg
V
DTr
V
Pd
I
Tj
FMG9A
CC
O
IN
R
2
1
(2)
(3)
R
2
150 (TOTAL)
300 (TOTAL)
−55 to +150
(4)
Limits
R
100
150
−10
50
40
50
2
(1)
R
DTr
(5)
1
1
R
R
1
2
=10kΩ
=10kΩ
1
Unit
mW
mA
˚C
˚C
V
V
and
∗
∗
1
2
External dimensions (Unit : mm)
EMG9
ROHM : EMT5
UMG9N
ROHM : UMT5
EIAJ : SC-88A
ROHM : SMT5
EIAJ : SC-74A
FMG9A
0.3to0.6
Abbreviated symbol : G9
Abbreviated symbol : G9
Abbreviated symbol : G9
0.1Min.
EMG9 / UMG9N / FMG9A
(4)
(5)
1.25
2.1
1.6
2.8
1.2
1.6
Each lead has same dimensions
Each lead has same dimensions
(3)
(2)
(1)
Each lead has same dimensions
Rev.A
1/2
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UMG9NTR Summary of contents
Page 1
Transistors Emitter common (dual digital transistors) EMG9 / UMG9N / FMG9A Features 1) Two DTC114E in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Symbol V I (off) Input voltage V I (on) Output voltage V O (on) Input current I I Output current I O (off) DC current gain G I Transition frequency f T Input ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...