UMB10NTN Rohm Semiconductor, UMB10NTN Datasheet - Page 2

• Manufacturer Part Number: UMB10NTN
• Description: TRANS DUAL PNP 50V 100MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMB10NTN

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -100mA
• Operating Temperature: RoHS Compliant
• Dc Current Gain Hfe: 80
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UMB10NTNTR

Transistors
∗
Type
EMB10
UMB10N
IMB10A
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
−500m
−200m
−100m
−
−
−
Transition frequency of the device
−100
500m
200m
100m
−
−
−
−
−50
−20
−10
−
−
−100µ
50m
20m
10m
Fig.1 Input voltage vs. output current
-2m
−100µ
−5
−2
−1
5m
1m
−
1
Fig.4 Output voltage vs. output
−200µ
−200µ
Parameter
Ta=−40˚C
(ON characteristics)
OUTPUT CURRENT : I
OUTPUT CURRENT : I
−500µ
−500µ
100˚C
current
25˚C
−1m
−1m
Package
Code
Basic ordering
unit (pieces)
−2m
−2m
Ta=100˚C
−5m
−5m
−40˚C
25˚C
−10m
−10m
O
Symbol
O
R
−20m
−20m
(A)
V
I
(A)
V
V
O (off)
2
G
R
O (on)
V
f
I (off)
I (on)
I
/ R
l
T
I
O
O
1
I
/l
=−0.3V
−50m
−50m
I
=20
1
−100m
−100m
−1.1
1.54
Min.
8000
T2R
80
17
−
−
−
−
−
Typ.
−0.1
250
2.2
21
−
−
−
−
−
Taping
3000
TN
Fig.2 Output current vs. input voltage
−500µ
−200µ
−100µ
−10m
−50µ
−20µ
−10µ
−5m
−2m
−1m
−5µ
−2µ
−1µ
Max.
−0.5
−0.3
−3.6
−0.5
2.86
26
0
−
−
−
(OFF characteristics)
INPUT VOLTAGE : V
−0.5
T110
3000
MHz
Unit
mA
kΩ
µA
V
V
−
−
−1
Ta=100˚C
−40˚C
25˚C
V
V
I
V
V
V
V
−1.5
O
CC
O
I
CC
O
CE
/I
= −5V
= −0.3V, I
= −5V, I
I
= −5mA/−0.25mA
= −5V, I
= −50V, V
= −10V, I
I (off)
−2
(V)
O
V
O
= −10mA
−2.5
CC
O
= −100µA
E
EMB10 / UMB10N / IMB10A
=−5V
= −5mA
I
= 5mA, f = 100MHz
= 0V
Conditions
−
−
−3
500
200
100
50
20
10
1k
−100µ
5
2
1
Fig.3 DC current gain vs. output
−200µ
∗
OUTPUT CURRENT : I
current
−500µ
Ta=100˚C
−1m
−40˚C
Rev.C
25˚C
−2m
−5m
−10m
O
−20m
(A)
V
O
=−5V
−50m
−100m
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