UMD3NTR Rohm Semiconductor, UMD3NTR Datasheet
UMD3NTR
Manufacturer Part Number
UMD3NTR
Description
TRANS NPN/PNP 50V 50MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet
1.UMD3NTR.pdf
(4 pages)
Specifications of UMD3NTR
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating
RoHS Compliant
Dc Current Gain Hfe
30
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UMD3NTR
Manufacturer:
VISHAY
Quantity:
34 000
Company:
Part Number:
UMD3NTR
Manufacturer:
ROHM
Quantity:
30 000
Part Number:
UMD3NTR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose
(Dual digital transistors)
EMD3 / UMD3N / IMD3A
1) Both the DTA114E chip and DTC114E chip in a EMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
DTr
type have been omitted.
∗
∗
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Features
Structure
Equivalent circuits
Absolute maximum ratings (Ta=25°C)
or UMT or SMT package.
automatic mounting machines.
interference.
EMD3 / UMD3N
2
R
R
, however, the “−” sign on DTr
1
2
=10kΩ
=10kΩ
Parameter
DTr
EMD3, UMD3N
IMD3A
2
(3)
(4)
R
R
2
1
(2)
(5)
R
R
1
2
DTr
(1)
(6)
1
Symbol
I
IMD3A
C (Max.)
Tstg
DTr
V
V
Pd
Tj
I
CC
O
IN
2
(4)
(3)
R
R
2
1
2
150 (TOTAL)
300 (TOTAL)
(5)
R
(2)
−55 to +150
values for the PNP
R
1
2
DTr
Limits
(6)
(1)
−10
100
150
50
40
50
R
R
1
1
2
=10kΩ
=10kΩ
Unit
mW
1
mA
˚C
˚C
V
V
and
∗
∗
1
2
Dimensions (Unit : mm)
EMD3
ROHM : EMT6
UMD3N
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
IMD3A
(4)
(3)
(6) (5) (4)
(1) (2) (3)
EMD3 / UMD3N / IMD3A
(6) (5) (4)
(1) (2) (3)
(2)
(5)
Abbreviated symbol : D3
Abbreviated symbol : D3
Abbreviated symbol : D3
(6)
(1)
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.D
1/3
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UMD3NTR Summary of contents
Page 1
Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Features 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. ...
Page 2
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol V I (off) Input voltage V I (on) Output voltage V O (on) Input current I Output current I O (off) DC current gain G Transition frequency f T Input resistance R Resistance ratio ...
Page 3
Transistors = 500m Ta=100˚C 200m 25˚C −40˚C 100m 50m 20m 10m 100µ 200µ 500µ 10m 20m 50m 100m (A) OUTPUT CURRENT : I O Fig.4 Output voltage vs. output ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...