UMB2NTN Rohm Semiconductor, UMB2NTN Datasheet - Page 2

• Manufacturer Part Number: UMB2NTN
• Description: TRANS DUAL PNP 50V 30MA SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UMB2NTN

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Module Configuration: Dual
• Transistor Polarity: PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: -100mA
• Operating Temperature: RoHS Compliant
• Dc Current Gain Hfe: 68
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UMB2NTN; UMB2NTNTR; UMT6/SC-88/SOT-363

Transistors
∗
Type
EMB2
UMB2N
IMB2A
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
−500m
−200m
−100m
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
Transition frequency of the device
−100
−500m
−200m
−100m
−50
−20
−10
−50m
−20m
−10m
−5m
−2m
−1m
−5
−2
−1
Fig.1 Input voltage vs. output current
−100µ
−1
−100µ
Fig.4 Output voltage vs. output
−200µ
Parameter
−200µ
Ta=−40˚C
(ON characteristics)
OUTPUT CURRENT : I
100˚C
−500µ
OUTPUT CURRENT : I
Ta=100˚C
−500µ
25˚C
current
−40˚C
−1m
25˚C
−1m
Package
Code
Basic ordering
unit (pieces)
−2m
−2m
−5m
−5m
−10m
−10m
Symbol
R
O
V
−20m
O
V
V
I
−20m
V
(A)
O (off)
2
(A)
O (on)
R
I (off)
I (on)
G
O
f
I
/ R
l
T
=−0.3V
I
O
1
I
/l
−50m
I
−50m
=20
1
−100m
−100m
32.9
Min.
0.8
−3
68
−
−
−
−
−
8000
T2R
Typ.
−0.1
250
47
−
−
−
−
−
1
Taping
3000
−500µ
−200µ
−100µ
−10m
TN
−50µ
−20µ
−10µ
−5m
−2m
−1m
−0.18
−1µ
Max.
−5µ
−2µ
−0.5
−0.5
−0.3
61.1
Fig.2 Output current vs. input voltage
1.2
−
0
−
−
V
Ta=100˚C
CC
=−5V
(OFF characteristics)
−0.5
−40˚C
25˚C
INPUT VOLTAGE : V
MHz
Unit
mA
µA
kΩ
T110
3000
V
V
−
−
−1
V
V
I
V
V
V
V
−1.5
O
CC
O
I
CC
O
CE
/I
= −5V
= −0.3V, I
= −5V, I
I
= −10mA/−0.5mA
= −5V, I
= −50V, V
= −10V, I
−2
I (off)
(V)
O
O
= −5mA
−2.5
O
= −100µA
E
= −2mA
I
= 5mA, f = 100MH
= 0V
Conditions
−3
−
−
EMB2 / UMB2N / IMB2A
Z
∗
500
200
100
50
20
10
1k
−100µ
5
2
1
Fig.3 DC current gain vs. output
−200µ
Ta=100˚C
−40˚C
OUTPUT CURRENT : I
25˚C
−500µ
current
−1m
Rev.A
−2m
−5m
−10m
O
−20m
(A)
V
O
=−5V
−50m
−100m
2/2