NP043A200A Panasonic - SSG, NP043A200A Datasheet
NP043A200A
Manufacturer Part Number
NP043A200A
Description
TRANS ARRAY NPN/NPN SSS MINI-6P
Manufacturer
Panasonic - SSG
Specifications of NP043A200A
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
80mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
150MHz, 80MHz
Power - Max
125mW
Mounting Type
Surface Mount
Package / Case
SSS Mini 6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NP043A200ATR
NPO43A200A
NPO43A200A
Composite Transistors
NP043A2
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2004
• SSS-Mini type 6-pin package, reduction of the mounting area and
• Maximum package height (0.4 mm) contributes to develop thinner
• UNR31A2 + UNR32A2
• Tr1
Tr1
Tr2
Overall
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
assembly cost by one half
equipments
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
V
V
Symbol
T
V
R
P
I
I
T
V
V
CBO
CEO
CBO
CEO
a
I
I
I
V
stg
V
C
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
CBO
CEO
= 25°C
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
−50
−50
−80
125
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJJ00285AED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
B
B
Unit
mW
B
C
B
E
E
mA
mA
= 0
= 0
°C
°C
V
V
V
V
= 0
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= −1 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: 7T
Internal Connection
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Display at No.1 lead
6
1
(0.35) (0.35)
0.12
1.00
5
2
+0.03
-0.02
±0.05
−30%
Tr1
Min
4
3
4.9
0.8
50
50
60
6
1
22 kΩ
22 kΩ
R
R
2
1
Typ
150
1.0
22
5
2
22 kΩ
SSSMini6-F1 Package
22 kΩ
R
1
R
2
+30%
Max
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
0.25
0.1
0.5
0.2
0.2
1.2
4
Tr2
3
Unit: mm
0 to 0.02
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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