XP0411500L Panasonic - SSG, XP0411500L Datasheet
![TRANS ARRAY PNP/PNP W/RES S MINI](/photos/5/29/52967/mini6-g2_sml.jpg)
XP0411500L
Manufacturer Part Number
XP0411500L
Description
TRANS ARRAY PNP/PNP W/RES S MINI
Manufacturer
Panasonic - SSG
Specifications of XP0411500L
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
80MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Resistor - Emitter Base (r2) (ohms)
-
Other names
XP0411500LTR
XP4115-(TX)
XP4115TR
XP4115TR
XP4115-(TX)
XP4115TR
XP4115TR
Composite Transistors
XP04115
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2009
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• UNR2115 × 2
Rating
of
element Collector-emitter voltage
Overall
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
(Transistors with built-in resistor)
Collector-base voltage
(Emitter open)
(Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Parameter
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
T
1
−55 to +150
Rating
I
I
V
V
V
V
I
V
V
V
−100
C
C
C
−50
−50
150
150
CB
CE
EB
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJJ00165CED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
■ Package
■ Marking Symbol: 6T
■ Internal Connection
L
• Code
• Pin Name
= 1 kΩ
= 1 kΩ
SMini6-G1
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
−30%
−4.9
Min
−50
−50
160
Tr1
6
1
Typ
10
80
5
2
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.2
Max
460
Tr2
4
3
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1