XN04A8800L Panasonic - SSG, XN04A8800L Datasheet - Page 2

• Manufacturer Part Number: XN04A8800L
• Description: TRANS ARRAY NPN/PNP W/RES MINI-6
• Manufacturer: Panasonic - SSG

Specifications of XN04A8800L

• Transistor Type: 1 PNP Pre-Biased, 1 NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 5mA, 10V / 150 @ 2mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA / 300mV @ 10mA, 100mA
• Current - Collector Cutoff (max): 500nA, 100µA
• Frequency - Transition: 100MHz, 80MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: Mini 6P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Resistor - Base (r1) (ohms): -
• Other names: XN04A8800LTR

XN04A88
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
• Tr1
• Tr2
Collector output capacitance
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
(Common base, input open circuited)
Transition frequency
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Common characteristics chart
500
400
300
200
100
0
0
Ambient temperature T
40
Parameter
Parameter
P
T
 T
80
a
120
a
( °C )
160
a
= 25°C ± 3°C
Symbol
Symbol
V
V
V
V
V
V
V
I
I
I
I
I
CE(sat)
C
CE(sat)
h
h
CBO
CBO
CEO
CEO
EBO
R
f
f
CBO
CEO
EBO
CBO
CEO
FE
FE
ob
T
T
2
I
I
I
V
V
V
I
V
V
I
I
V
V
V
V
I
V
C
C
E
C
C
C
C
CB
CB
CB
CB
CE
CE
CB
CE
EB
CE
= 10 µA, I
= 2 mA, I
= 10 µA, I
= 100 mA, I
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJJ00088BED
= 10 V, I
= 10 V, I
= −10 V, I
= 10 V, I
= 10 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= 20 V, I
= −50 V, I
B
C
E
E
E
Conditions
Conditions
B
C
B
E
C
= 0
E
E
= 0, f = 1 MHz
= −2 mA, f = 200 MHz
= 0
= 0
B
B
B
C
E
= 0
= 0
= 2 mA
= 0
= 0
= 2 mA, f = 200 MHz
= 0
= 10 mA
= 0
= 0
= −5 mA
= − 0.3 mA
−30%
Min
Min
−50
−50
150
60
50
20
7
Typ
Typ
100
0.1
3.5
4.7
80
− 0.25
+30%
− 0.1
− 0.5
Max
Max
−2.0
460
0.1
0.1
0.3
MHz
MHz
Unit
Unit
mA
mA
µA
µA
µA
kΩ
pF


V
V
V
V
V
V
V