DDA114YU-7-F Diodes Inc, DDA114YU-7-F Datasheet - Page 2

• Manufacturer Part Number: DDA114YU-7-F
• Description: TRANS PREBIASED DUAL PNP SOT363
• Manufacturer: Diodes Inc

Specifications of DDA114YU-7-F

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDA114YU-FDITR

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistor (R
Gain-Bandwidth Product*
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistor (R
Resistance Ratio Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30346 Rev. 9 - 2
(DDA113TU & DDA143TU & DDA114TU only)
1
1
) Tolerance
) Tolerance
Characteristic
Characteristic
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
DDA124EU
DDA144EU
DDA114YU
DDA123JU
DDA114EU
@T
A
= 25°C unless otherwise specified
Symbol
V
Symbol
BV
BV
BV
V
I
R
I
CE(sat)
ΔR
V
V
I
h
CBO
EBO
O(off)
ΔR
f
O(on)
2
FE
G
CBO
CEO
EBO
l(off)
l(on)
f
T
I
/R
T
l
1
l
www.diodes.com
1
1
2 of 5
Min
100
-50
-50
-30
⎯
⎯
⎯
⎯
-5
Min
-0.5
-0.5
-0.3
-0.5
-0.5
-30
-20
56
68
68
80
30
⎯
⎯
⎯
⎯
⎯
Typ
250
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
−1.9
Typ
-1.1
-1.1
-1.1
-1.9
-1.9
-0.1
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
-0.5
-0.5
-0.3
+30
600
⎯
⎯
⎯
⎯
-0.36
-0.18
-0.88
-0.88
Max
-3.0
-3.0
-1.4
-1.1
-3.0
-0.3
-3.6
-0.5
+30
+20
⎯
⎯
⎯
MHz
Unit
μA
μA
⎯
%
V
V
V
V
MHz V
Unit
mA
μA
⎯
%
%
V
V
I
I
I
V
V
I
I
I
I
V
C
C
E
C
C
C
C
CB
EB
CE
V
V
V
V
V
V
I
I
I
I
I
V
V
V
V
V
V
V
/I
/I
/I
O
O
O
O
O
= -50μA
= -50μA
= -1mA
= -1mA, V
CC
O
O
O
O
O
I
CC
O
O
O
O
O
CE
B
B
B
/I
/I
/I
/I
/I
= -5V
= -50V
= -4V
= -10V, I
l
l
l
l
l
= -2.5mA / -0.25mA
= -1mA / -0.1mA
= -10mA / -1mA
= -0.3, I
= -0.3, I
= -0.3, I
= -0.3, I
= -0.3, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -10mA / -0.5mA
= -10mA / -0.5mA
= -5mA / -0.25mA
= -5mA / -0.25mA
= -10mA / -0.5mA
= -10V, I
= -5V, I
= -50V, V
O
O
O
O
O
Test Condition
CE
O
O
O
O
O
E
Test Condition
O
= -5mA
= -5mA
= -10mA
= -10mA
= -5mA
= -5mA
= -2mA
= -1mA
= -5mA
= -10mA
E
= 5mA, f = 100MHz
= -100μA
I
= -5V
= -5mA, f = 100MHz
= -0V
⎯
⎯
⎯
© Diodes Incorporated
DDA (xxxx) U
DDA143TU
DDA114TU
DDA113TU