BC 817UPN B6327 Infineon Technologies, BC 817UPN B6327 Datasheet
BC 817UPN B6327
Specifications of BC 817UPN B6327
SP000056357
Related parts for BC 817UPN B6327
BC 817UPN B6327 Summary of contents
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NPN Silicon AF Transistor Array For AF stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistors in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 Tape loading orientation Marking on ...
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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base ...
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DC current gain 105 °C 85 °C 65 °C 25 °C -40 ° Base-emitter saturation voltage ...
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Transition frequency parameter GHz CE BC 817/818 3 10 MHz Total power dissipation P 400 mW 300 ...
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Permissible Pulse Load totmax totDC D=0 0.005 0.01 0. 0.05 0.1 0.2 0 ...
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Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...