MBT3904DW2T1G ON Semiconductor, MBT3904DW2T1G Datasheet

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MBT3904DW2T1G

Manufacturer Part Number
MBT3904DW2T1G
Description
TRANS DUAL GP 200MA 40V SC88
Manufacturer
ON Semiconductor
Datasheet

Specifications of MBT3904DW2T1G

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
MBT3904DW2T1GOS
MBT3904DW1T1G,
MBT3904DW2T1G
Dual General Purpose
Transistors
spin−off of our popular SOT−23/SOT−323 three−leaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT−363 six−leaded surface mount package. By putting two
discrete devices in one package, this device is ideal for low−power
surface mount applications where board space is at a premium.
Features
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 7
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum Rat-
ings are stress ratings only. Functional operation above the Recommended Op-
erating Conditions is not implied. Extended exposure to stresses above the Re-
commended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Total Package Dissipation (Note 1)
Thermal Resistance,
Junction and Storage
The MBT3904DW1T1G and MBT3904DW2T1G devices are a
Compliant
h
Low V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
recommended footprint.
FE
T
Junction−to−Ambient
Temperature Range
A
, 100−300
= 25°C
CE(sat)
Characteristic
, ≤ 0.4 V
Rating
Symbol
Symbol
T
V
V
V
ESD
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to +150
Value
HBM Class 2
Max
200
MM Class B
150
833
6.0
40
60
1
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
MBT3904DW1T1G SOT−363
MBT3904DW2T1G SOT−363
†For information on tape and reel specifications,
6
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
1
XX = MA for MBT3904DW1T1G
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Q
ORDERING INFORMATION
(3)
(4)
1
Q
(4)
(3)
1
MJ for MBT3904DW2T1G
http://onsemi.com
SOT−363/SC−88/
CASE 419B
MBT3904DW1T1
MBT3904DW2T1
SC70−6
(Pb−Free)
(Pb−Free)
STYLE 27
Package
STYLE 1
(5)
(5)
Publication Order Number:
(2)
(2)
MBT3904DW1T1/D
6
1
Tape & Reel
Tape & Reel
Shipping
(1)
MARKING
DIAGRAM
(1)
(6)
3000 /
3000 /
Q
Q
XX MG
(6)
2
2
G

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MBT3904DW2T1G Summary of contents

Page 1

... MBT3904DW1T1G, MBT3904DW2T1G Dual General Purpose Transistors The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space premium ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1.0 mAdc Collector −Base Breakdown Voltage ( mAdc Emitter −Base Breakdown Voltage ( ...

Page 3

SWITCHING CHARACTERISTICS Characteristic Delay Time (V = 3.0 Vdc Rise Time ( mAdc Storage Time (V = 3.0 Vdc Fall Time ( 1.0 mAdc DUTY CYCLE ...

Page 4

TYPICAL TRANSIENT CHARACTERISTICS 10 7.0 5.0 C ibo 3.0 C obo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance 500 300 200 100 ...

Page 5

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS ( SOURCE RESISTANCE = 200 1 SOURCE RESISTANCE = 200 0 SOURCE RESISTANCE = 1 ...

Page 6

TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° BE(sat) 1.0 ...

Page 7

TYPICAL STATIC CHARACTERISTICS 1000 25°C A 100 10 0 COLLECTOR CURRENT (mA) C Figure 19. Current Gain Bandwidth Product 1 0.1 Thermal 0.01 0.001 100 1000 ...

Page 8

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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