EMZ1DXV6T1 ON Semiconductor, EMZ1DXV6T1 Datasheet - Page 2

• Manufacturer Part Number: EMZ1DXV6T1
• Description: TRANS BR NPN/PNP DUAL 50V SOT563
• Manufacturer: ON Semiconductor

Specifications of EMZ1DXV6T1

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 500mW
• Frequency - Transition: 180MHz, 140MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: EMZ1DXV6T1OS

2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
*This package is inherently Pb−Free.
ELECTRICAL CHARACTERISTICS
Q1: PNP
Q2: NPN
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Emitter−Base Cutoff Current
Collector−Emitter Saturation Voltage (Note 2)
DC Current Gain (Note 2)
(V
Output Capacitance
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage (Note 3)
DC Current Gain (Note 3)
Transition Frequency
Output Capacitance
EMZ1DXV6T1
EMZ1DXV6T1G
EMZ1DXV6T5
EMZ1DXV6T5G
CE
= −12 Vdc, I
(I
(I
(I
(V
(V
(I
(V
Transition Frequency
(V
(I
(I
(I
(V
(V
(I
(V
(V
(V
C
C
E
C
C
C
E
C
CB
EB
CE
CB
CB
EB
CE
CE
CB
= −50 mAdc, I
= 50 mAdc, I
= −50 mAdc, I
= −1.0 mAdc, I
= −50 mAdc, I
= 50 mAdc, I
= 1.0 mAdc, I
= 50 mAdc, I
= −30 Vdc, I
= −5.0 Vdc, I
= −6.0 Vdc, I
= −12 Vdc, I
= 60 Vdc, I
= 7.0 Vdc, I
= 6.0 Vdc, I
= 12 Vdc, I
= 12 Vdc, I
C
= −2.0 mAdc, f = 30 MHz)
Device
E
E
B
E
C
C
E
E
B
B
C
= 0)
Characteristic
B
= 0)
E
E
B
= 5.0 mAdc)
B
C
= 0)
= 2.0 mAdc, f = 30 MHz)
= 0 Adc, f = 1 MHz)
= 0)
= 0)
= 0)
= 0)
= 1.0 mAdc)
= −5.0 mAdc)
= 0)
= 0 Adc, f = 1 MHz)
= 0)
= 0)
= −1.0 mAdc)
(T
A
= 25°C)
EMZ1DXV6T1, EMZ1DXV6T5
http://onsemi.com
2
SOT−563*
SOT−563*
SOT−563*
SOT−563*
Package
V
V
V
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
(BR)CBO
(BR)CEO
(BR)EBO
I
CE(sat)
I
CE(sat)
I
C
I
C
h
h
CBO
CBO
EBO
EBO
f
f
FE
OB
FE
OB
T
T
−6.0
Min
−60
−50
120
120
7.0
60
50
−
−
−
−
−
−
−
−
−
−
4000 Units / Tape & Reel
4000 Units / Tape & Reel
8000 Units / Tape & Reel
8000 Units / Tape & Reel
Typ
140
180
3.5
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Shipping
Max
−0.5
−0.5
−0.5
560
560
0.5
0.5
0.4
−
−
−
−
−
−
−
−
−
−
†
MHz
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
nA
mA
pF
mA
mA
pF
−
−