MBT3904DW1T1 ON Semiconductor, MBT3904DW1T1 Datasheet - Page 7

• Manufacturer Part Number: MBT3904DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of MBT3904DW1T1

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Contains lead / RoHS non-compliant
• Other names: MBT3904DW1T1OSCT

MBT3904DW1T1G, MBT3904DW2T1G
TYPICAL STATIC CHARACTERISTICS
1000
1
10 mSec
V
= 1 V
CE
T
= 25°C
100 mSec
A
1.0 mSec
0.1
1.0 Sec
100
Thermal
Limit
0.01
10
0.001
0.1
1
10
100
1000
1
10
100
I
, COLLECTOR CURRENT (mA)
V
, COLLECTOR EMITTER VOLTAGE (V)
C
CE
Figure 19. Current Gain Bandwidth Product
Figure 20. Safe Operating Area
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