MMPQ3904 ON Semiconductor, MMPQ3904 Datasheet

TRANS SS NPN QUAD 40V 16SOIC

MMPQ3904

Manufacturer Part Number
MMPQ3904
Description
TRANS SS NPN QUAD 40V 16SOIC
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMPQ3904

Transistor Type
4 NPN (Quad)
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
200mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
75 @ 10mA, 1V
Power - Max
800mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
MMPQ3904OS

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NPN Silicon
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
March, 2001 – Rev. 2
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Power Dissipation
Total Power Dissipation
Operating and Storage
Collector–Emitter Breakdown Voltage (1)
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Semiconductor Components Industries, LLC, 2001
@ T A = 25 C
Derate above 25 C
@ T C = 25 C
Derate above 25 C
Junction Temperature Range
(I C = 1.0 mAdc, I B = 0)
(I C = 10 mAdc, I E = 0)
(I E = 10 mAdc, I C = 0)
(V CB = 40 Vdc, I E = 0)
(V EB = 4.0 Vdc, I C = 0)
Rating
Characteristic
t
Symbol
T J , T stg
V CEO
(T A = 25 C unless otherwise noted)
V CB
V EB
P D
P D
I C
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
I CBO
I EBO
Transistor
Each
0.66
0.4
3.2
5.3
–55 to +150
Min
6.0
40
60
Value
200
6.0
40
60
1
Equal Power
Transistors
Typ
Four
1.92
15.4
800
6.4
Max
50
50
mW/ C
mW/ C
mAdc
Watts
Unit
Vdc
Vdc
Vdc
mW
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
C
ON Semiconductor Preferred Device
CASE 751B–05, STYLE 4
16
Publication Order Number:
SO–16
1
MMPQ3904/D

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MMPQ3904 Summary of contents

Page 1

... V (BR)CEO 40 — — V (BR)CBO 60 — — V (BR)EBO 6.0 — — I CBO — — EBO — — Semiconductor Preferred Device Unit Vdc 16 Vdc 1 Vdc CASE 751B–05, STYLE 4 mAdc SO–16 mW mW/ C Watts mW Unit Vdc Vdc Vdc nAdc nAdc Publication Order Number: MMPQ3904/D ...

Page 2

... CB = 5.0 Vdc 1.0 MHz) Input Capacitance ( 0.5 Vdc 1.0 MHz) SWITCHING CHARACTERISTICS Turn–On Time ( Vdc, V BE(off) = –0.5 Vdc 1.0 mAdc) Turn–Off Time ( mAdc 1.0 mAdc) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. MMPQ3904 ( unless otherwise noted) (Continued) Symbol CE(sat) V BE(sat ...

Page 3

... Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. MMPQ3904 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. ...

Page 4

... ISSUE J –B– JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com MMPQ3904/D _ ...

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