LM394N National Semiconductor, LM394N Datasheet - Page 2

• Manufacturer Part Number: LM394N
• Description: IC TRANS SUPER MATCH 8-DIP
• Manufacturer: National Semiconductor

Specifications of LM394N

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 20mA
• Voltage - Collector Emitter Breakdown (max): 35V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 100µA, 1mA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Other names: *LM394N

Current Gain (h
Current Gain Match
(h
Emitter-Base Offset
Voltage
Change in Emitter-Base
Offset Voltage vs
Collector-Base Voltage
(CMRR)
Change in Emitter-Base
Offset Voltage vs
Collector Current
Emitter-Base Offset
Voltage Temperature
Drift
Logging Conformity
Collector-Base Leakage
Collector-Collector
Leakage
Input Voltage Noise
Collector to Emitter
Saturation Voltage
e
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
(Note 4)
Collector Current
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Substrate Voltage
Collector-Collector Voltage
Electrical Characteristics
Note 1 Collector-base voltage is swept from 0 to V
Note 2 Offset voltage drift with V
within 0 003% over the entire temperature range Measurements taken at
Note 3 Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation
Note 4 Refer to RETS194X drawing of military LM194H version for specifications
FE
100
LM394C
LM394C
LM394C
LM394C
Match)
Parameter
I
B
I
C
h
FE(MIN)
FE
)
V
I
I
I
I
V
I
I
V
I
(Note 1)
I
V
V
I
I
I
V
I
V
V
V
I
f
I
I
C
C
C
C
C
C
C
C
C
C
C1
C
C
C
C
OS
CB
CB
CB
CB
CB
OS
CB
CB
CC
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
e
100 Hz to 100 kHz
e
e
e
e
e
Trimmed to 0 at 25 C
e
e
e
1 mA
100 A
10 A
1 A
10 A to 1 mA
1 A
1 A to 1 mA
1 A to 1 mA
1 A to 0 3 mA
10 A to 1 mA (Note 2)
3 nA to 300 A
100 A V
1 mA I
1 mA I
0 at T
I
C2
0V to V
0V to V
0
0V to V
0V
0 (Note 3)
V
V
Conditions
MAX
MAX
A
e
B
B
e
e
25 C is valid only when the ratio of I
MAX
MAX
MAX
CB
MAX
10 A
100 A
(T
e
(Note 1)
at a collector current of 1 A 10 A 100 A and 1 mA
J
e
0V
25 C)
20 mA
V
MAX
35V
20V
35V
20V
35V
20V
35V
20V
Min
350
350
300
200
a
25 C and temperature extremes
LM194
2
0 08
0 03
0 05
Typ
700
550
450
300
150
0 5
1 0
0 1
1 8
0 2
0 1
25
10
5
Base-Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Information
See AN-450 ‘‘Surface Mounting and their Effects on Prod-
uct Reliability’’ for other methods of soldering surface
mount devices
C1
LM194
LM394 LM394B LM394C
Metal Can Package (10 sec )
Dual-In-Line Package (10 sec )
Small Outline Package
to I
Max
0 25
100
0 3
0 1
2 0
Vapor Phase (60 sec )
Infrared (15 sec )
25
25
2
C2
is adjusted to give the initial zero offset This ratio must be held to
Min
300
250
200
150
LM394
0 08
0 03
0 05
Typ
700
550
450
300
150
0 5
1 0
0 1
1 8
0 2
0 1
25
10
5
Max
150
1 0
0 3
0 5
5 0
50
50
4
Min
225
200
150
100
LM394B 394C
0 03
0 05
Typ
500
400
300
200
150
1 0
2 0
0 2
0 1
1 8
0 2
0 1
50
10
5
b
b
b
55 C to
65 C to
25 C to
Max
200
100
1 5
0 5
0 5
5 0
50
5
g
500 mW
a
a
a
10 mA
125 C
150 C
260 C
260 C
215 C
220 C
nV Hz
Units
85 C
V C
V C
nA
nA
%
%
V
V
V
V
V
V