MAT04FPZ Analog Devices Inc, MAT04FPZ Datasheet - Page 3

• Manufacturer Part Number: MAT04FPZ
• Description: IC TX MATCHED MONO QUAD 14-DIP
• Manufacturer: Analog Devices Inc

Specifications of MAT04FPZ

• Transistor Type: 4 NPN (Quad)
• Current - Collector (ic) (max): 30mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 60mV @ 100µA, 1mA
• Current - Collector Cutoff (max): 5nA
• Power - Max: 350mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -

ELECTRICAL CHARACTERISTICS
Parameter
Current Gain
Offset Voltage
Average Offset
Input Bias Current
Input Offset Current
Average Offset
Breakdown Voltage
Collector-Base
Collector-Emitter
Collector-Substrate
otherwise noted. Each transistor is individually tested. For matching parameters (V
verified to meet stated limits. All tests made at endpoints unless otherwise noted.)
Current Drift
Leakage Current
Leakage Current
Leakage Current
Voltage Drift
Symbol
h
V
TCV
I
I
TCI
BV
I
I
I
B
OS
CBO
CES
CS
FE
OS
CEO
OS
OS
(at –25 C ≤ T
Conditions
10 µA ≤ I
0 V ≤ V
10 µA ≤ I
0 V ≤ V
I
V
I
0 V ≤ V
I
V
I
V
I
V
V
V
C
C
C
C
C
CB
CB
CB
CB
CE
CS
= 100 µA
= 100 µA
= 100 µA
= 100 µA
= 10 µA
= 40 V
= 0 V
= 0 V
= 0 V
= 40 V
= 40 V
CB
CB
CB
C
C
3
≤ 30 V
≤ 30 V
≤ 30 V
≤ 1 mA
≤ 1 mA
A
85 C for MAT04E, –40 C ≤ T
1
2
OS
, I
OS
) each dual transistor combination is
Min Typ
225 625
40
MAT04E
60
0.2
160 445
4
50
0.5
5
0.7
A
85 C for MAT04F, unless
Max
260
1
20
Min Typ
200 500
40
MAT04F
120 520
0.4
200 500
8
100
0.5
5
0.7
Max
2
40
MAT04
Unit
µV
µV/°C
nA
nA
pA/°C
V
nA
nA
nA