NST30010MXV6T1G ON Semiconductor, NST30010MXV6T1G Datasheet

TRANSISTOR PNP DUAL PAIR SOT-563

NST30010MXV6T1G

Manufacturer Part Number
NST30010MXV6T1G
Description
TRANSISTOR PNP DUAL PAIR SOT-563
Manufacturer
ON Semiconductor
Datasheet

Specifications of NST30010MXV6T1G

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
500mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
NST30010MXV6T1G
NST30010MXV6T1GOSTR

Available stocks

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NST30010MXV6T1G
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Quantity:
56 000
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NST30010MXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
NST30010MXV6T1G
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ON
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NST30010MXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NST30010MXV6T1G
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NST30010MXV6T1G
Dual Matched General
Purpose Transistor
PNP Matched Pair
ideally suited for portable products. They are assembled to create a
pair of devices highly matched in all parameters, eliminating the need
for costly trimming. Applications are Current Mirrors; Differential,
Sense and Balanced Amplifiers; Mixers; Detectors and Limiters.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 0
MAXIMUM RATINGS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
These transistors are housed in an ultra−small SOT563 package
Current Gain Matching to 10%
Base−Emitter Voltage Matched to 2 mV
Drop−In Replacement for Standard Device
These are Pb−Free Devices
Rating
Symbol
V
V
V
CEO
CBO
EBO
I
C
Value
−100
−5.0
−30
−30
1
mAdc
Unit
V
V
V
†For information on tape and reel specifications,
NST30010MXV6T1G SOT−563
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
Q
(3)
(4)
ORDERING INFORMATION
1
MARKING DIAGRAMS
UU = Device Code
M
G
http://onsemi.com
= Date Code
= Pb−Free Package
CASE 463A
1
SOT−563
PLASTIC
6
(Pb−Free)
UU M G
Package
(5)
Publication Order Number:
G
(2)
1
NST30010MXV6/D
4000/Tape & Reel
Shipping
(1)
(6)
Q
2

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NST30010MXV6T1G Summary of contents

Page 1

... G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NST30010MXV6T1G SOT−563 4000/Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NST30010MXV6/D 2 † ...

Page 2

... The smaller h FE(1) FE( − the absolute difference of one transistor compared to the other transistor within the same package. BE(1) BE(2) NST30010MXV6T1G Parameter Symbol P D One Heated Device R qJA Y Unheated Device Heated by ...

Page 3

... I , COLLECTOR CURRENT (mA) C Figure 5. Base Emitter Turn−On Voltage vs. Collector Current NST30010MXV6T1G TYPICAL CHARACTERISTICS 4 100 3 3.0 150°C 2.5 2.0 25°C 1.5 −55°C 1.0 0 100 ...

Page 4

... V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance NST30010MXV6T1G TYPICAL CHARACTERISTICS 7 C (pF) 6 ibo Figure 8. Output Capacitance http://onsemi.com 4 C (pF) obo COLLECTOR BASE VOLTAGE (V) 25 ...

Page 5

... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NST30010MXV6T1G PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F NOTES: 1 ...

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