EMX1DXV6T5G ON Semiconductor, EMX1DXV6T5G Datasheet - Page 3

• Manufacturer Part Number: EMX1DXV6T5G
• Description: TRANS NPN GP DUAL 60V SOT-563
• Manufacturer: ON Semiconductor

Specifications of EMX1DXV6T5G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 500mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

1.5
0.5
60
50
40
30
20
10
2
1
0
20
18
16
14
12
10
0
0.01
0
0
T
A
= 25°C
Figure 3. Collector Saturation Region
0.1
2
V
1
CE
Figure 5. Capacitance
I
, COLLECTOR VOLTAGE (V)
B
Figure 1. I
, BASE CURRENT (mA)
V
EB
4
1
2
C
(V)
− V
TYPICAL ELECTRICAL CHARACTERISTICS
CE
EMX1DXV6T1, EMX1DXV6T5
10
6
3
T
I
B
A
160 mA
140 mA
120 mA
= 20 mA
= 25°C
100 mA
80 mA
40 mA
60 mA
http://onsemi.com
100
8
4
3
1000
900
800
700
600
500
400
300
200
100
100
10
0
0.2
0.1
7
6
5
4
3
2
1
0
0.5
1
Figure 2. DC Current Gain
1
I
5
10
I
C
T
C
T
, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
A
, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
A
= − 25°C
= 75°C
10
20
V
10
CB
20
T
40
(V)
A
= 25°C
60
80
100
30
T
V
100 150 200
A
CE
V
= 25°C
CE
= 5 V
= 10 V
40