EMX1DXV6T1G ON Semiconductor, EMX1DXV6T1G Datasheet

TRANS NPN GP DUAL 60V SOT-563

EMX1DXV6T1G

Manufacturer Part Number
EMX1DXV6T1G
Description
TRANS NPN GP DUAL 60V SOT-563
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMX1DXV6T1G

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
500mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMX1DXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
500
Part Number:
EMX1DXV6T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
EMX1DXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
EMX1DXV6T1,
EMX1DXV6T5
Dual NPN General Purpose
Amplifier Transistor
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 1
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Junction and Storage
This NPN transistor is designed for general purpose amplifier
Reduces Board Space
High h
Low V
These are Pb−Free Devices
T
Junction-to-Ambient
T
Junction-to-Ambient
Temperature Range
A
(Both Junctions Heated)
A
(One Junction Heated)
= 25°C
= 25°C
FE
CE(sat)
Characteristic
Characteristic
, 210−460 (Typical)
Rating
, < 0.5 V
(T
A
= 25°C)
Preferred Devices
V
V
V
Symbol
Symbol
Symbol
T
(BR)CBO
(BR)CEO
(BR)EBO
R
R
J
P
P
, T
I
qJA
qJA
C
D
D
stg
357 (Note 1)
350 (Note 1)
500 (Note 1)
250 (Note 1)
2.9 (Note 1)
4.0 (Note 1)
−55 to +150
Value
Max
Max
100
7.0
60
50
mW/°C
mW/°C
1
mAdc
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
°C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
(Note: Microdot may be in either location)
PURPOSE AMPLIFIER
DUAL NPN GENERAL
Tr
ORDERING INFORMATION
SURFACE MOUNT
1
3X = Specific Device Code
M
G
MARKING DIAGRAM
TRANSISTORS
(1)
(6)
http://onsemi.com
= Month Code
= Pb−Free Package
6
CASE 463A
SOT−563
STYLE 1
1
3X M G
Publication Order Number:
G
1
(5)
(2)
EMX1DXV6T1/D
Tr
(3)
(4)
2

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EMX1DXV6T1G Summary of contents

Page 1

EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space ...

Page 2

... Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. ORDERING INFORMATION Device EMX1DXV6T1 EMX1DXV6T1G EMX1DXV6T5 EMX1DXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 25° COLLECTOR VOLTAGE (V) CE Figure 1. I − 1.5 1 0.5 0 0.01 0 ...

Page 4

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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