NST3906DP6T5G ON Semiconductor, NST3906DP6T5G Datasheet
NST3906DP6T5G
Specifications of NST3906DP6T5G
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NST3906DP6T5G Summary of contents
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... NST3906DP6T5G Dual General Purpose Transistor The NST3906DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space premium ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 4) (I Collector −Base Breakdown Voltage (I C Emitter −Base Breakdown Voltage ( mAdc Collector Cutoff Current ( Vdc CHARACTERISTICS (Note ...
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1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. Collector Current 1.0 0.9 0.8 0.7 ...
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... C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...