NST3906DXV6T1G ON Semiconductor, NST3906DXV6T1G Datasheet - Page 7

• Manufacturer Part Number: NST3906DXV6T1G
• Description: TRANS PNP DUAL 200MA 40V SOT563
• Manufacturer: ON Semiconductor

Specifications of NST3906DXV6T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NST3906DXV6T1GOS; NST3906DXV6T1GOS; NST3906DXV6T1GOSTR

6
1
G
-X-
A
STYLE 1:
5
2
PIN 1. EMITTER 1
4
3
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
D
0.08 (0.003)
-Y-
6 5 PL
NST3906DXV6T1, NST3906DXV6T5
B
M
STYLE 2:
PIN 1. EMITTER 1
PACKAGE DIMENSIONS
X
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
Y
http://onsemi.com
SOT-563, 6 LEAD
CASE 463A-01
C
ISSUE O
7
S
STYLE 3:
J
K
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
NOTES:
STYLE 4:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
PIN 1. COLLECTOR
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
B
C
D
G
K
S
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
J
MILLIMETERS
MIN
1.50
1.10
0.50
0.17
0.08
0.10
1.50
0.50 BSC
MAX
1.70
1.30
0.60
0.27
0.18
0.30
1.70
0.059
0.043
0.020
0.007
0.003
0.004
0.059
MIN
0.020 BSC
INCHES
MAX
0.067
0.051
0.024
0.011
0.007
0.012
0.067