BC847BPDXV6T1G ON Semiconductor, BC847BPDXV6T1G Datasheet

TRANS NPN/PNP DUAL LP 45V SOT563

BC847BPDXV6T1G

Manufacturer Part Number
BC847BPDXV6T1G
Description
TRANS NPN/PNP DUAL LP 45V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.BC847BPDXV6T1G.pdf (8 pages)

Specifications of BC847BPDXV6T1G

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
500mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BC847BPDXV6T1GOS
BC847BPDXV6T1GOS
BC847BPDXV6T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BC847BPDXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
2 050
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BC847BPDXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
BC847BPDXV6T1G
Quantity:
8 000
BC847BPDXV6T1,
BC847BPDXV6T5
Dual General Purpose
Transistor
NPN/PNP Dual (Complementary)
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 1
MAXIMUM RATINGS − NPN
MAXIMUM RATINGS − PNP
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current −
Total Device Dissipation
Thermal Resistance −
Total Device Dissipation
Derate above 25°C
Thermal Resistance −
Junction and Storage
This transistor is designed for general purpose amplifier
Lead−Free Solder Plating
Continuous
Continuous
Derate above 25°C
Junction-to-Ambient
T
Junction-to-Ambient
Temperature Range
A
(Both Junctions Heated)
= 25°C
(One Junction Heated)
Characteristic
Characteristic
Rating
Rating
T
A
= 25°C
Symbol
Symbol
V
V
V
V
V
V
CEO
CBO
EBO
CEO
CBO
EBO
I
I
C
C
Symbol
Symbol
T
R
R
J
P
P
, T
qJA
qJA
D
D
stg
−55 to +150
Value
Value
−100
−5.0
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
100
−45
−50
6.0
45
50
Max
Max
357
350
500
250
2.9
4.0
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Unit
Unit
mW
mW
°C
V
V
V
V
V
V
†For information on tape and reel specifications,
BC847BPDXV6T1
BC847BPDXV6T1G SOT−563
BC847BPDXV6T5
BC847BPDXV6T5G SOT−563
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
Q
4F = Specific Device Code
M
G
(Note: Microdot may be in either location)
ORDERING INFORMATION
(4)
(3)
1
MARKING DIAGRAM
= Month Code
= Pb−Free Package
http://onsemi.com
BC847BPDX6T1
1
CASE 463A
6
SOT−563
PLASTIC
(Pb−Free)
(Pb−Free)
SOT−563
SOT−563
Package
4F MG
5 4
(5)
G
Publication Order Number:
(2)
1 2
3
BC847BPDXV6T1/D
4000/Tape & Reel
4000/Tape & Reel
8000/Tape & Reel
8000/Tape & Reel
4 mm pitch
2 mm pitch
4 mm pitch
2 mm pitch
Shipping
(1)
(6)
Q
2
†

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BC847BPDXV6T1G Summary of contents

Page 1

... Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BC847BPDXV6T1 SOT−563 4 mm pitch 4000/Tape & Reel BC847BPDXV6T1G SOT−563 2 mm pitch (Pb−Free) 4000/Tape & Reel BC847BPDXV6T5 SOT−563 4 mm pitch 8000/Tape & Reel BC847BPDXV6T5G SOT−563 2 mm pitch (Pb− ...

Page 2

BC847BPDXV6T1, BC847BPDXV6T5 ELECTRICAL CHARACTERISTICS (NPN) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage ( mA) C Collector −Emitter Breakdown Voltage = 10 μ Collector −Base Breakdown Voltage = 10 mA Emitter ...

Page 3

BC847BPDXV6T1, BC847BPDXV6T5 ELECTRICAL CHARACTERISTICS (PNP) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage = −10 μ Collector −Base Breakdown Voltage = −10 mA Emitter ...

Page 4

BC847BPDXV6T1, BC847BPDXV6T5 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5 COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain 2 1.6 1 ...

Page 5

BC847BPDXV6T1, BC847BPDXV6T5 TYPICAL PNP CHARACTERISTICS 2 − 25°C A 1.0 0.7 0.5 0.3 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 − COLLECTOR CURRENT (mAdc) C Figure 7. Normalized DC Current Gain ...

Page 6

BC847BPDXV6T1, BC847BPDXV6T5 INFORMATION FOR USING THE SOT−563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size ...

Page 7

... SOLDERING FOOTPRINT* 1.35 0.0531 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT−563, 6 LEAD CASE 463A−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 8

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...

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