BC858CDXV6T1G ON Semiconductor, BC858CDXV6T1G Datasheet

TRANS PNP DUAL 30V 100MA SOT-563

BC858CDXV6T1G

Manufacturer Part Number
BC858CDXV6T1G
Description
TRANS PNP DUAL 30V 100MA SOT-563
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC858CDXV6T1G

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
500mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC858CDXV6T1G
Manufacturer:
ON
Quantity:
24 000
BC858CDXV6T1,
BC858CDXV6T5
Dual General Purpose
Transistor
PNP Dual
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation, (Note 1)
Thermal Resistance
Total Device Dissipation, (Note 1)
Thermal Resistance
Junction and Storage
This transistor is designed for general purpose amplifier
These are Pb−Free Devices
T
Derate above 25°C
Junction-to-Ambient (Note 1)
T
Derate above 25°C
Junction-to-Ambient (Note 1)
Temperature Range
A
A
= 25°C
(Both Junctions Heated)
= 25°C
(One Junction Heated)
Characteristic
Characteristic
Rating
Symbol
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−100
−5.0
Max
Max
−30
−30
357
350
500
250
2.9
4.0
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Unit
mW
mW
°C
V
V
V
†For information on tape and reel specifications,
BC858CDXV6T1
BC858CDXV6T1G
BC858CDXV6T5
BC858CDXV6T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
Q
(3)
(4)
1
ORDERING INFORMATION
MARKING DIAGRAMS
3L
M
G
http://onsemi.com
= Device Code
= Date Code
= Pb−Free Package
CASE 463A
1
SOT−563
PLASTIC
(Pb−Free)
(Pb−Free)
6
SOT−563
SOT−563
SOT−563
SOT−563
Package
3L M G
(5)
Publication Order Number:
G
(2)
1
BC858CDXV6T1/D
4000/Tape & Reel
4000/Tape & Reel
8000/Tape & Reel
8000/Tape & Reel
Shipping
(1)
(6)
Q
2

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BC858CDXV6T1G Summary of contents

Page 1

... Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BC858CDXV6T1 SOT−563 4000/Tape & Reel BC858CDXV6T1G SOT−563 4000/Tape & Reel (Pb−Free) BC858CDXV6T5 SOT−563 8000/Tape & Reel BC858CDXV6T5G SOT−563 8000/Tape & Reel (Pb−Free) † ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C Collector −Emitter Breakdown Voltage = −10 mA Collector −Base Breakdown Voltage = −10 mA Emitter −Base Breakdown ...

Page 3

BC858CDXV6T1, BC858CDXV6T5 2 − 25°C A 1.0 0.7 0.5 0.3 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 − COLLECTOR CURRENT (mAdc) C Figure 1. Normalized DC Current Gain −2.0 T −1.6 ...

Page 4

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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