MBT2222ADW1T1G ON Semiconductor, MBT2222ADW1T1G Datasheet - Page 17

• Manufacturer Part Number: MBT2222ADW1T1G
• Description: TRANS NPN GP 600MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT2222ADW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Polarity: NPN
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 75V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 150mW
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant

Final Product/Process Change Notification #16266
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MMSZ10T1G
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MMSZ11T1
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MMSZ12T1H
MMSZ12T3G
MMSZ13T1
MMSZ13T1G
MMSZ13T1H
MMSZ15T1
MMSZ15T1G
MMSZ15T1H
MMSZ15T3G
MMSZ16T1
MMSZ16T1G
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 17 of 36