BC856BDW1T1G ON Semiconductor, BC856BDW1T1G Datasheet - Page 11

• Manufacturer Part Number: BC856BDW1T1G
• Description: TRANS PNP DUAL 65V 100MA SOT-363
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of BC856BDW1T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Power - Max: 380mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Collector Cutoff (max): -
• Transistor Polarity: PNP
• Number Of Elements: 2
• Collector-emitter Voltage: 65V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 220
• Power Dissipation: 380mW
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Final Product/Process Change Notification #16266
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
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