TPCP8901(TE85L,F) Toshiba, TPCP8901(TE85L,F) Datasheet
TPCP8901(TE85L,F)
Specifications of TPCP8901(TE85L,F)
Related parts for TPCP8901(TE85L,F)
TPCP8901(TE85L,F) Summary of contents
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... TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process) Portable Equipment Applications Switching Applications • Small footprint due to small and thin package • High DC current gain : PNP h FE :NPN h FE • Low collector-emitter saturation : PNP V : NPN V • High-speed switching : PNP (typ.) ...
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Electrical Characteristics (Ta = 25°C) PNP Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time NPN Characteristics Collector cut-off ...
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NPN I – 1 0.8 0.6 0.4 0.2 Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 0.2 0.4 0.6 0.8 Collector−emitter voltage – (sat Common emitter ...
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PNP I – 1.0 −100 −50 0.8 0.6 0.4 0.2 Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 0.2 0.4 0.6 0.8 Collector−emitter voltage − – (sat Common emitter ...
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Common 1000 100 10 1 0.001 0.01 r – Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm Single-device ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...