QST8TR Rohm Semiconductor, QST8TR Datasheet
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QST8TR
Manufacturer Part Number
QST8TR
Description
TRANSISTOR PNP 12V 1.5A TSMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.QST8TR.pdf
(3 pages)
Specifications of QST8TR
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
200mV @ 25mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 200mA, 2V
Power - Max
1.25W
Frequency - Transition
400MHz
Mounting Type
Surface Mount
Package / Case
TSMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QST8TR
Manufacturer:
ROHM
Quantity:
3 200
Transistors
General purpose amplification (−12V, −1.5A)
QST8
Low frequency amplifier
Driver
1) A collector current is large.
2) Collector saturation voltage is low.
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a
∗Pulsed
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Emitter cutoff current
Collector-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
DC current gain
Corrector output capacitance
Transition frequency
Application
Features
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
V
At I
CE (sat)
C
= − 500mA / I
Parameter
: max. − 200mV
25mm×25mm×
Parameter
B
t
= − 25mA
0.8mm ceramic substrate
Symbol
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
C
−55 to +150
Limits
−1.5
1.25
−15
−12
500
150
0.9
Symbol
−6
−3
V
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
T
CBO
CEO
EBO
W/ELEMENT
mW/TOTAL
W/TOTAL
Unit
Min.
−15
−12
270
°C
°C
−6
V
V
V
A
A
−
−
−
−
−
∗1
∗2
∗3
∗3
Typ.
−85
400
12
−
−
−
−
−
−
External dimensions (Unit : mm)
Equivalent circuit
ROHM : TSMT6
Max.
−100
−100
−200
680
Tr
−
−
−
−
−
1
(6)
(1)
(5)
(2)
MHz
Unit
mV
nA
nA
pF
V
V
V
−
Abbreviated symbol : T08
(4)
(3)
Tr
2
I
I
I
V
V
I
V
V
V
Each lead has same dimensions
C
C
E
C
= −10µA
CB
EB
CE
CE
CB
= −10µA
= −1mA
= −500mA, I
= −6V
= −15V
= −2V, I
= −2V, I
= −10V, I
2.8
1.6
Conditions
C
E
= −200mA
=200mA, f=100MHz
E
=0A, f=1MHz
B
= −25mA
Rev.A
∗
QST8
∗
1/2
Related parts for QST8TR
QST8TR Summary of contents
Page 1
Transistors General purpose amplification (−12V, −1.5A) QST8 Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. : max. − 200mV V CE (sat) = − 500mA / I = − 25mA ...
Page 2
Transistors Packaging specifications Package Taping Type Code Basic ordering unit (pieces) 3000 QST8 Electrical characteristic curves 1000 = − Pulsed Ta=100°C Ta=25°C 100 Ta= −40°C 10 −0.001 −0.01 −0.1 −1 −10 COLLECTOR CURRENT : I (A) C Fig.1 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...