US6T9TR Rohm Semiconductor, US6T9TR Datasheet

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US6T9TR

Manufacturer Part Number
US6T9TR
Description
TRANS PNP DUAL 30V 1A TUMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of US6T9TR

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
350mV @ 25mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 100mA, 2V
Power - Max
400mW
Frequency - Transition
320MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Transistors
General purpose amplification (−30V, −1A)
US6T9
Low frequency amplifier
Driver
1) Collector current is large.
2) Collector saturation voltage is low.
∗1
∗2
∗3
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Features
Electrical characteristics (Ta=25°C)
Application
Absolute maximum ratings (Ta=25°C)
Single pulse, P
Each Terminal Mounted on a Recommended
Mounted on a
V
At I
CE(sat)
C
= −500mA / I
≤ −350mV
Parameter
25mm×25mm×
W
=1ms
Parameter
B
t
= −25mA
0.8mm Ceramic substrate
Symbol
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
C
−55 to +150
Limits
−30
−30
400
150
1.0
0.7
−6
−1
−2
Symbol
V
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
WELEMENT
mW/TOTAL
W/TOTAL
Unit
°C
°C
V
V
V
A
A
Min.
−30
−30
270
−6
∗1
∗2
∗3
∗3
−150
Typ.
320
7
Dimensions (Unit : mm)
Equivalent circuit
(6)
(1)
−100
−100
−350
Max.
680
ROHM : TUMT6
(5)
(2)
MHz
Unit
mV
nA
nA
pF
V
V
V
(4)
(3)
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CB
=−10µA
=−10µA
=−1mA
=−500mA, I
Abbreviated symbol : T09
=−6V
=−30V
=−2V, I
=−2V, I
=−10V, I
Conditions
C
E
=−100mA
=100mA, f=100MHz
E
=0A, f=1MHz
B
=−25mA
Rev.B
US6T9
1/2

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US6T9TR Summary of contents

Page 1

Transistors General purpose amplification (−30V, −1A) US6T9 Application Low frequency amplifier Driver Features 1) Collector current is large. 2) Collector saturation voltage is low. ≤ −350mV V CE(sat −500mA / I = −25mA C B Absolute maximum ...

Page 2

Transistors Packaging specifications Package Type Code Basic ordering unit (pieces) US6T9 Electrical characteristic curves 1000 =− Ta=100°C Pulsed Ta=25°C Ta=−40°C 100 10 0.001 0.01 0 COLLECTOR CURRENT : I (A) C Fig.1 DC current gain vs. ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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