QSZ2TR Rohm Semiconductor, QSZ2TR Datasheet - Page 4

• Manufacturer Part Number: QSZ2TR
• Description: TRANSISTOR PNP 30V 1.5A TSMT5
• Manufacturer: Rohm Semiconductor

Specifications of QSZ2TR

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 270 @ 100mA, 2V
• Power - Max: 1.25W
• Frequency - Transition: 300MHz, 280MHz
• Mounting Type: Surface Mount
• Package / Case: TSMT5
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistors
Tr2
1000
0.001
100
0.01
10
Fig.11 Grounded emitter propagation
0.1
0.001
1
1000
0
100
10
1
0.1
V
Pulsed
BASE TO EMITTER CURRENT : V
EMITTER TO BASE VOLTAGE : V
COLLECTOR TO BASE VOLTAGE : V
CE
Fig.14 Collector output capacitance
= −2V
COLLECTOR CURRENT : I
Fig.8 DC current gain
Ta=25°C
Ta=100°C
characteristics
0.01
Ta= −40°C
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
0.5
Ta=100°C
vs. collector current
1
0.1
Ta= −40°C
Cib
Ta=25°C
1
10
1
Cob
C
V
Pulsed
(A)
CE
BE
Ta = 25°C
I
f = 1MHz
C
= −2V
(V)
EB
= 0A
( V)
1.5
10
CB
( V)
100
0.01
1000
0.1
Fig.9 Collector-emitter saturation voltage
100
0.001
1
10
0.01
V
V
BE(sat)
CE(sat)
Fig.12 Gain bandwidth product
base-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : I
0.01
EMITTER CURRENT : I
vs. emitter current
0.1
Ta= −40°C
Ta=25°C
Ta=100°C
0.1
Ta=100°C
Ta=25°C
Ta= −40°C
1
1
I
Pulsed
C
E
C
(A)
(A)
Ta=25°C
V
f=100MHz
/I
B
CE
=20/1
= −2V
10
10
0.001
0.01
Fig.10 Collector-emitter saturation voltage
0.1
1000
0.001
10
100
1
10
0.01
Ta=25°C
Pulsed
1
I
C
/I
B
=20/1
vs. collector current
COLLECTOR CURRENT : I
I
C
/I
COLLECTOR CURRENT : I
0.01
B
=50/1
Fig.13 Switching time
0.1
0.1
I
C
/I
tstg
B
=10/1
tf
1
1
C
tdon
QSZ2
tr
(A)
Ta=25°C
V
I
C
C
(A)
CE
/I
B
= −5V
=20/1
10
4/4
10