FMY5T148 Rohm Semiconductor, FMY5T148 Datasheet - Page 3

• Manufacturer Part Number: FMY5T148
• Description: TRANS NPN/PNP 120V 50MA SMT5 TR
• Manufacturer: Rohm Semiconductor

Specifications of FMY5T148

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 120V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-5, SOT-753
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistor
Tr2
Fig.11 Collector-emitter saturation voltage
Fig.8 Ground emitter output characteristics
0.05
0.02
20
10
10
0.5
0.2
0.1
5
2
1
0
8
6
4
2
Fig.7 Emitter input capacitance
−0.5
1
COLLECTOR TO EMITTER VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
vs. collector current ( )
COLLECTOR CURRENT : I
I
B
25.0
22.5
20.0
17.5
15.0
12.5
10.0
=0µA
vs. emitter-base voltage
2
7.5
5.0
2.5
−1
4
Cib
−2
I
5
C
8
/I
B
= 50
10
20
−5
12
10
20
−10
C
(mA)
Ta=25°C
16
Ta=25°C
f=1MH
I
C
EB
=0A
−20
(V)
50
CE
Z
(V)
20
Fig.9 Ground emitter propagation characteristics
Fig.12 Collector-emitter saturation voltage
0.5
0.2
0.1
0.05
0.02
50
20
10
0.5
0.2
0.1
5
2
1
0
1
BASE TO EMITTER VOLTAGE : V
0.2
vs. collector current (
COLLECTOR CURRENT : I
2
0.4
0.6
5
0.8 1.0 1.2 1.4 1.6
10
20
)
C
V
(mA)
I
CE
C
BE
/I
= 6V
B
(V)
= 10
50
Fig.13 Transition frequency vs. emitter current
500
200
100
50
500
200
100
0.2
Fig.10 DC current gain vs. collector current
50
−0.5
V
CE
COLLECTOR CURRENT : I
= 6V
COLLECTOR CURRENT : I
−1
0.5
1
−2
2
Rev.B
−5
5
−10 −20
10
C
FMY5
20
(mA)
E
Ta = 25°C
5 V
(mA)
V
CE
−50
3 V
= 1V
3/4
50