IMT1AT108 Rohm Semiconductor, IMT1AT108 Datasheet - Page 3

• Manufacturer Part Number: IMT1AT108
• Description: TRANS PNP DUAL 2SA1037AK EMT6
• Manufacturer: Rohm Semiconductor

Specifications of IMT1AT108

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 150mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 300mW
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Transistors
Fig.7 Collector-emitter saturation
-0.05
-0.5
-0.2
-0.1
-1
-0.2
voltage vs. collector current ( ΙΙ )
-0.5
COLLECTOR CURRENT : I
Ta = 100°C
-1
-40°C
-2
25°C
-5
-10 -20
C
l
(mA)
C
/l
B
-50 -100
= 10
1000
Fig.8 Gain bandwidth product vs.
500
200
100
50
0.5
emitter current
1
EMITTER CURRENT : I
2
5
10
20
E
Ta = 25 °C
V
(mA)
CE
= - 12V
50
100
EMT1 / UMT1N / IMT1A
Fig.9
20
10
5
2
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE
Collector output capacitance vs.
Emitter input capacitance vs.
emitter-base voltage
collector-base voltage
-0.5
-1
Rev.C
-2
-5
-10
Ta = 25 °C
f = 1MHz
I
I
: V
E
C
= 0A
= 0A
EB
CB
-20
(V)
(V)
3
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3