EMZ8T2R Rohm Semiconductor, EMZ8T2R Datasheet

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EMZ8T2R

Manufacturer Part Number
EMZ8T2R
Description
TRANS PNP DUAL BIP+BIP EMT6
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of EMZ8T2R

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
150mA, 500mA
Voltage - Collector Emitter Breakdown (max)
50V, 12V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V / 270 @ 10mA, 2V
Power - Max
150mW
Frequency - Transition
180MHz, 260MHz
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Transistors
Power management (dual transistors)
EMZ8 / UMZ8N
1) Both a 2SA2018 chip and 2SC2412K chip in a EMT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Basic ordering unit (pieces)
Feature
Equivalent circuits
Package, marking, and packaging specifications
Absolute maximum ratings (Ta=25°C)
or UMT package.
120mW per element must not be exceeded.
Part No.
Package
Marking
Code
Parameter
(3)
(4)
Tr
2
(5)
(2)
(1)
(6)
Tr
1
EMZ8
EMT6
8000
T2R
Z8
Symbol
UMZ8N
V
V
UMT6
V
Tstg
3000
I
P
Tj
CBO
CEO
EBO
I
TR
CP
Z8
C
C
−500
−15
−12
150 (TOTAL)
−6
Tr1
−1
−55 to +150
Limits
150
150
60
50
Tr2
7
Unit
mW
mA
°C
°C
V
V
V
A
Dimensions(Unit : mm)
EMZ8
UMZ8N
ROHM : EMT6
EIAJ :
ROHM : UMT6
EIAJ : SC-88
(6) (5) (4)
(1) (2) (3)
(6) (5) (4)
(1) (2) (3)
EMZ8 / UMZ8N
Each lead has same dimensions
Each lead has same dimensions
Rev.C
1/4

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EMZ8T2R Summary of contents

Page 1

Transistors Power management (dual transistors) EMZ8 / UMZ8N Feature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. Equivalent circuits (3) (2) ( (4) (5) (6) Absolute maximum ratings (Ta=25°C) Parameter ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage ...

Page 3

Transistors 1000 = 500 Ta=25°C 200 100 100 200 500 1000 EMITTER CURRENT : I (mA) C Fig.7 Gain Bandwidth Product vs. Emitter Current <Tr2> 50 ...

Page 4

Transistors 0 = 0.2 Ta=100°C 0.1 25°C −55°C 0.05 0.02 0.01 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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