EMT18T2R Rohm Semiconductor, EMT18T2R Datasheet

EMT18T2R

Manufacturer Part Number

EMT18T2R

Description

TRANS PNP DUAL BIP+BIP EMT6

Manufacturer

Rohm Semiconductor

Datasheet

1.EMT18T2R.pdf (4 pages)

Specifications of EMT18T2R

Transistor Type

2 PNP (Dual)

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

12V

Vce Saturation (max) @ Ib, Ic

250mV @ 10mA, 200mA

Dc Current Gain (hfe) (min) @ Ic, Vce

270 @ 10mA, 2V

Power - Max

150mW

Frequency - Transition

260MHz

Mounting Type

Surface Mount

Package / Case

EMT6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

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General purpose transistors(dual transistors)

Features

1) Two 2SA2018 chips in a EMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3

3) Transistor elements are independent, eliminating

Structure

Epitaxial planar type

PNP silicon transistor

The following characteristics apply to both Tr

Inner circuit

Absolute maximum ratings (Ta=25C)

∗1 Single pulse P

∗2 120mW per element must not be exceeded.

∗3 200mW per element must not be exceeded.

○

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Power dissipation

Junction temperature

Storage temperature

www.rohm.com

automatic mounting machines.

interference.

EMT18 / UMT18N / IMT18

EMT18 / UMT18N

(3)

(4)

Parameter

(2)

(5)

=1ms

(1)

(6)

IMT18

(4)

(3)

(5)

(2)

Symbol

(6)

(1)

Tstg

CBO

CEO

EBO

EMT6

UMT6

SMT6 300 (TOTAL)

150 (TOTAL)

−55 to +150

Limits

−500

150

and Tr

−15

−12

1.0

−6

∗1

∗2

∗3

Unit

°C

1/3

Dimensions (Unit : mm)

EMT18

ROHM : EMT6

UMT18N

ROHM : UMT6

EIAJ : SC-88

IMT18

ROHM : SMT6

EIAJ : SC-74

JEDEC : SOT-457

Abbreviated symbol : T18

Each lead has same dimensions

2010.08 - Rev.C

Related parts for EMT18T2R

EMT18T2R Summary of contents

Page 1

General purpose transistors(dual transistors) EMT18 / UMT18N / IMT18 Features 1) Two 2SA2018 chips in a EMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Structure Epitaxial planar ...

Page 2

EMT18 / UMT18N / IMT18 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BV CBO Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage BV EBO Collector cutoff current I CBO Emitter cutoff current I EBO Collector-emitter ...

Page 3

EMT18 / UMT18N / IMT18 1000 Ta=25∞C 500 200 100 ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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