IMT3AT108 Rohm Semiconductor, IMT3AT108 Datasheet
IMT3AT108
Manufacturer Part Number
IMT3AT108
Description
TRANS DUAL PNP 50V 150MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.EMT3T2R.pdf
(3 pages)
Specifications of IMT3AT108
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
140MHz
Power Dissipation Pd
300mW
Dc Collector Current
-150mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Transistors
General purpose (dual transistors)
EMT3 / IMT3A
1) Two 2SA1037AK chips in a EMT or SMT package.
∗Transition frequency of the device.
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Basic ordering unit (pieces)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Collector-emitter breakdown voltage
Transition frequency
Features
Equivalent circuits
Absolute maximum ratings (Ta=25°C)
Package, marking, and packaging specifications
Electrical characteristics (Ta=25°C)
Tr
(4)
EMT3
2
(3)
Package
Marking
Code
Type
(5)
(2)
(1)
(6)
Tr
Parameter
Parameter
1
EMT3
IMT3A
Tr
(3)
IMT3A
2
(4)
(2)
EMT3
EMT6
8000
T2R
(5)
T3
(6)
(1)
Tr
1
IMT3A
SMT6
T108
3000
T3
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
Symbol
C
V
BV
BV
BV
I
Cob
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
150(TOTAL)
300(TOTAL)
−55 to +150
Limits
−150
−60
−50
150
−6
Min.
−60
−50
120
−6
−
−
−
−
−
Unit
mW
mA
Typ.
140
°C
°C
V
V
V
−
−
−
−
−
−
−
4
∗2
∗1
Max.
−0.1
−0.1
−0.5
560
−
−
−
−
5
EMT3
ROHM : EMT6
IMT3A
ROHM : SMT6
EIAJ : SC-74
External dimensions (Unit : mm)
MHz
Unit
µA
µA
pF
V
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CE
=−50µA
=−1mA
=−50µA
/I
B
=−60V
=−6V
=−6V, I
=−12V, I
=−12V, I
0.3Min.
=−50mA/−5mA
( 4 )
( 5 )
( 6 )
EMT3 / IMT3A
C
=−1mA
E
E
Conditions
=2mA, f=100MHz
=0A, f=1MHz
1.2
1.6
1.6
2.8
( 3 )
( 2 )
( 1 )
Rev.A
Each lead has same dimensions
Each lead has same dimensions
∗
1/2
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IMT3AT108 Summary of contents
Page 1
Transistors General purpose (dual transistors) EMT3 / IMT3A Features 1) Two 2SA1037AK chips in a EMT or SMT package. Equivalent circuits EMT3 IMT3A (3) (2) (1) (4) (5) ( (4) (5) (6) ...
Page 2
Transistors Electrical characteristics curves −50 = − Ta=100˚C −20 25˚C −40˚C −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 V) BASE TO EMITTER VOLTAGE : Fig.1 Grounded emitter ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...