EMT3T2R Rohm Semiconductor, EMT3T2R Datasheet

EMT3T2R

Manufacturer Part Number

EMT3T2R

Description

TRANS DUAL PNP 50V 150MA EMT6 TR

Manufacturer

Rohm Semiconductor

Datasheet

1.EMT3T2R.pdf (3 pages)

Specifications of EMT3T2R

Transistor Type

2 PNP (Dual)

Current - Collector (ic) (max)

150mA

Voltage - Collector Emitter Breakdown (max)

50V

Vce Saturation (max) @ Ib, Ic

500mV @ 5mA, 50mA

Dc Current Gain (hfe) (min) @ Ic, Vce

120 @ 1mA, 6V

Power - Max

150mW

Frequency - Transition

140MHz

Mounting Type

Surface Mount

Package / Case

EMT6

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

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Transistors

General purpose (dual transistors)

EMT3 / IMT3A

1) Two 2SA1037AK chips in a EMT or SMT package.

∗Transition frequency of the device.

∗1 120mW per element must not be exceeded.

∗2 200mW per element must not be exceeded.

Basic ordering unit (pieces)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

Junction temperature

Storage temperature

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

Collector-emitter breakdown voltage

Transition frequency

Features

Equivalent circuits

Absolute maximum ratings (Ta=25°C)

Package, marking, and packaging specifications

Electrical characteristics (Ta=25°C)

(4)

EMT3

(3)

Package

Marking

Code

Type

(5)

(2)

(1)

(6)

Parameter

EMT3

IMT3A

(3)

IMT3A

(4)

(2)

EMT3

EMT6

8000

T2R

(5)

(6)

(1)

IMT3A

SMT6

T108

3000

Symbol

Tstg

CBO

CEO

EBO

Symbol

Cob

CE(sat)

CBO

EBO

CBO

CEO

EBO

150(TOTAL)

300(TOTAL)

−55 to +150

Limits

−150

−60

−50

150

−6

Min.

−60

−50

120

−6

−

Unit

Typ.

140

°C

−

∗2

∗1

Max.

−0.1

−0.5

560

−

EMT3

ROHM : EMT6

IMT3A

ROHM : SMT6

EIAJ : SC-74

External dimensions (Unit : mm)

MHz

Unit

µA

−

=−50µA

=−1mA

=−50µA

=−60V

=−6V

=−6V, I

=−12V, I

0.3Min.

=−50mA/−5mA

( 4 )

( 5 )

( 6 )

EMT3 / IMT3A

=−1mA

Conditions

=2mA, f=100MHz

=0A, f=1MHz

1.2

1.6

2.8

( 3 )

( 2 )

( 1 )

Rev.A

Each lead has same dimensions

∗

1/2

Related parts for EMT3T2R

EMT3T2R Summary of contents

Page 1

Transistors General purpose (dual transistors) EMT3 / IMT3A Features 1) Two 2SA1037AK chips in a EMT or SMT package. Equivalent circuits EMT3 IMT3A (3) (2) (1) (4) (5) ( (4) (5) (6) ...

Transistors Electrical characteristics curves −50 = − Ta=100˚C −20 25˚C −40˚C −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 V) BASE TO EMITTER VOLTAGE : Fig.1 Grounded emitter ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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EMT3T2R Rohm Semiconductor, EMT3T2R Datasheet

EMT3T2R

Specifications of EMT3T2R

Related parts for EMT3T2R

EMT3T2R Summary of contents

Page 1

Page 2

Page 3

Related keywords