MMDT4413-7 Diodes Zetex, MMDT4413-7 Datasheet - Page 2

• Manufacturer Part Number: MMDT4413-7
• Description: TRANS COMP PAIR 40V SOT-363
• Manufacturer: Diodes Zetex

Specifications of MMDT4413-7

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V / 100 @ 150mA, 2V
• Power - Max: 200mW
• Frequency - Transition: 250MHz, 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMDT4413DITR; MMDT4413TR; MMDT4413TR

Electrical Characteristics, NPN 4401 Section
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30121 Rev. 10 - 2
6.
Characteristic
Short duration pulse test used to minimize self-heating effect.
V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
I
h
C
C
h
CEX
I
h
h
h
f
BL
t
t
FE
t
t
oe
eb
re
T
d
s
cb
ie
fe
r
f
www.diodes.com
0.75
Min
100
250
6.0
1.0
0.1
1.0
60
40
20
40
80
40
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2 of 6
@T
A
= 25°C unless otherwise specified
Max
0.40
0.75
0.95
100
100
300
500
225
1.2
6.5
8.0
30
15
30
15
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
x 10
MHz
Unit
nA
nA
kΩ
μS
pF
pF
ns
ns
ns
ns
⎯
⎯
V
V
V
V
V
-4
I
I
I
V
V
I
I
I
I
I
I
I
I
I
V
V
V
V
f = 100MHz
V
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
B1
CE
CE
CB
EB
CE
CE
CC
BE(off)
CC
= 100μA, I
= 150mA, I
= 100μA, I
= 1.0mA, I
= 100µA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 500mA, I
= 150mA, I
= 500mA, I
= I
= 35V, V
= 35V, V
= 5.0V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 10V, I
= 10V, I
= 30V, I
= 30V, I
B2
= 2.0V, I
= 15mA
Test Condition
C
C
C
C
B
C
E
EB(OFF)
EB(OFF)
B
B
B
B
= 1.0mA, f = 1.0kHz
= 20mA,
= 150mA,
= 150mA,
= 0
= 0
= 0
CE
CE
CE
CE
CE
= 15mA
= 50mA
= 15mA
= 50mA
B1
= 1.0V
= 1.0V
= 1.0V
= 1.0V
= 2.0V
= 15mA
= 0.4V
= 0.4V
© Diodes Incorporated
E
C
= 0
= 0
MMDT4413