MMDT2222A-7 Diodes Inc, MMDT2222A-7 Datasheet - Page 2

• Manufacturer Part Number: MMDT2222A-7
• Description: TRANSISTOR DUAL NPN 40V SOT-363
• Manufacturer: Diodes Inc

Specifications of MMDT2222A-7

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMDT2222ADITR; MMDT2222ATR; MMDT2222ATR

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
DS30125 Rev. 12 - 2
200
150
100
50
5. Short duration pulse test used to minimize self-heating effect.
0
0
25
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
A
50
Characteristic
Ambient Temperature
75
100 125
@T
A
= 25°C unless otherwise specified
150
175
200
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V
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
C
I
I
I
C
h
CBO
CEX
EBO
I
NF
f
BL
t
t
FE
obo
t
t
ibo
T
d
2 of 4
r
s
f
Min
100
300
6.0
0.6
1,000
75
40
35
50
75
40
50
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
⎯
⎯
⎯
⎯
⎯
100
10
1
0.1
Max
T = -25°C
300
225
0.3
1.0
1.2
2.0
4.0
10
10
10
20
25
10
25
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
A
8
Fig. 2, Typical DC Current Gain vs.
I , COLLECTOR CURRENT (mA)
C
T = 125°C
A
1
MHz
Unit
nA
μA
nA
nA
nA
pF
pF
dB
⎯
ns
ns
ns
ns
V
V
V
V
V
T = +25°C
Collector Current
A
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
V
V
V
f = 100MHz
V
R
V
V
V
C
C
E
C
C
C
C
C
C
C
C
C
C
C
I
B1
CB
CB
CE
EB
CE
CB
EB
CE
CE
CC
BE(off)
CC
S
= 10μA, I
= 150mA, I
= 10μA, I
= 10mA, I
= 100μA, V
= 1.0mA, V
= 10mA, V
= 150mA, V
= 500mA, V
= 10mA, V
= 150mA, V
= 500mA, I
= 150mA, I
= 500mA, I
= 1.0kΩ, f = 1.0kHz
10
= I
= 60V, V
= 3.0V, I
= 60V, V
= 10V, I
= 60V, I
= 60V, I
= 10V, f = 1.0MHz, I
= 0.5V, f = 1.0MHz, I
= 20V, I
= 30V, I
= 30V, I
B2
= - 0.5V, I
= 15mA
C
E
Test Condition
B
C
E
E
C
C
C
C
EB(OFF)
EB(OFF)
CE
= 0
= 0
B
B
B
B
CE
= 0
= 0
= 0, T
= 100μA,
= 20mA,
= 150mA,
= 150mA,
CE
CE
CE
CE
CE
= 0
= 15mA
= 50mA
= 15mA
= 50mA
100
= 10V, T
= 10V
= 10V
= 10V
B1
= 10V
= 10V
= 1.0V
V
CE
A
= 15mA
= 3.0V
= 3.0V
= 150°C
= 1.0V
© Diodes Incorporated
E
A
C
= 0
= -55°C
= 0
1,000
MMDT2222A