MBT6429DW1T1G ON Semiconductor, MBT6429DW1T1G Datasheet - Page 4

• Manufacturer Part Number: MBT6429DW1T1G
• Description: TRANS DUAL NPN 200MA 40V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBT6429DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 500 @ 100µA, 5V
• Power - Max: 150mW
• Frequency - Transition: 700MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 700 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 500 at 0.01 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MBT6429DW1T1G; MBT6429DW1T1GOSTR

1.0
0.8
0.6
0.4
0.2
8.0
6.0
4.0
3.0
2.0
1.0
0.8
4.0
3.0
2.0
1.0
0.7
0.5
0.4
0.3
0.2
0
0.01
0.1
0.01
V
T
V
0.02 0.05 0.1 0.2
CE(sat)
J
BE
0.2
= 25°C
@ V
@ I
CE
V
0.02
C
C
0.5
C
= 5.0 V
CE
cb
/I
ob
B
Figure 9. “On” Voltages
V
I
Figure 11. Capacitance
= 5.0 V
C
= 10
R
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
1.0
0.03
C
0.5 1.0 2.0 5.0
eb
2.0
0.05
C
5.0
ib
10
0.1
T
10 20
J
20
T
= 25°C
A
= 125°C
Figure 8. DC Current Gain
I
C
http://onsemi.com
50
, COLLECTOR CURRENT (mA)
50
- 55°C
25°C
0.2
100
100
4
0.3
- 0.4
- 0.8
- 1.2
- 1.6
- 2.0
- 2.4
500
300
200
100
70
50
0.01 0.02 0.05 0.1 0.2
1.0
0.5
Figure 12. Current−Gain − Bandwidth Product
V
T
CE
J
= 25°C
Figure 10. Temperature Coefficients
2.0
= 5.0 V
3.0
1.0
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0
0.5 1.0 2.0 5.0
7.0
2.0
10
3.0
T
20
J
= 25°C to 125°C
30
10 20
5.0
- 55°C to 25°C
50 70 100
50 100
10