IMT17T110 Rohm Semiconductor, IMT17T110 Datasheet
IMT17T110
Manufacturer Part Number
IMT17T110
Description
TRANS DUAL PNP 50V 500MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.IMT17T110.pdf
(3 pages)
Specifications of IMT17T110
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
600mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
300mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
200MHz
Power Dissipation Pd
300mW
Dc Collector Current
-500mA
Operating Temperature
RoHS Compliant
Configuration
Dual
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V
Emitter- Base Voltage Vebo
- 5 V
Continuous Collector Current
- 500 mA
Maximum Dc Collector Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
200 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMT17T110
IMT17T110TR
IMT17T110TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMT17T110
Manufacturer:
进口ROHM
Quantity:
20 000
Transistors
General purpose transistor
(isolated dual transistors)
IMT17
General purpose small signal amplifier
1) Two 2SA1036K chips in an SMT package.
2) Same size as SMT3 package, so same mounting
3) Transistor elements are independent, eliminating
4) High collector current. I
5) Mounting cost, and area, are reduced by one half.
Epitaxial planar type
PNP silicon transistor
The following characteristics apply to both Tr
∗
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Applications
Features
Structure
Absolute maximum ratings (Ta=25°C)
200mW per element must not be exceeded.
Electrical characteristics(Ta=25°C)
Measured using pulse current.
machine can be used for both.
interference.
Parameter
Parameter
C
Symbol
= −500mA
V
V
V
Tstg
Pd
Tj
Symbol
CBO
CEO
EBO
I
V
C
BV
BV
BV
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
T
EBO
−60
−50
−5
Min.
120
300(TOTAL)
−55 to +150
−
−
−
−
−
−60
−50
Limits
−5
−500
150
1
Typ.
200
−
−
−
−
−
−
−
7
and Tr
−0.1
−0.1
−0.6
Max.
390
−
−
−
−
−
2
.
Unit
mW
mA
°C
°C
V
V
V
MHz
Unit
µA
µA
pF
V
V
V
V
−
Part No.
IMT17
External dimensions (Unit : mm)
Packaging specifications
∗
ROHM : SMT6
EIAJ : SC-74
I
I
I
V= −30V
V= −4V
I
V
V
V
C
C
E
C
CE
CE
CB
= −100µA
= −1mA
= −100µA
/I
All terminals have same dimensions
B
= −3V, I
= −5V, I
= −10V, I
= −500mA/ −50mA
0.95 0.95
(4)
2.9
1.9
(3)
0.3
±
±
−0.05
+0.1
0.2
0.2
(5)
(2)
C
E
Packaging type
Code
Basic ordering unit (pieces)
= −100mA
= 20mA, f= 100MHz
E
= 0A, f= 1MHz
(6)
(1)
Conditions
Abbreviated symbol: T17
0.15 −0.06
+0.1
1.1 +0.2
0.8
−0.1
±
0.1
0 to 0.1
∗
Rev.A
Tr
Taping
T110
3000
2
(4)
(3)
IMT17
(5)
(2)
Tr
(6)
(1)
1
1/2
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IMT17T110 Summary of contents
Page 1
Transistors General purpose transistor (isolated dual transistors) IMT17 Applications General purpose small signal amplifier Features 1) Two 2SA1036K chips in an SMT package. 2) Same size as SMT3 package, so same mounting machine can be used for both. 3) Transistor ...
Page 2
Transistors Electrical characteristic curves −500 = − °C Ta=100 −200 °C 25 −100 °C − 55 −50 −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 −0.2 −0.4−0.6−0.8−1.0−1.2−1.4−1.6−1.8−2.0−2.2 0 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...