IMZ2AT108 Rohm Semiconductor, IMZ2AT108 Datasheet

TRANS NPN/PNP 50V 150MA SOT-457

IMZ2AT108

Manufacturer Part Number
IMZ2AT108
Description
TRANS NPN/PNP 50V 150MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of IMZ2AT108

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
180MHz, 140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Dual
Transistor Polarity
NPN/PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V / + 50 V
Emitter- Base Voltage Vebo
- 6 V, + 7 V
Continuous Collector Current
- 150 mA / + 150 mA
Maximum Dc Collector Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Frequency
180 MHz at NPN, 140 MHz at PNP
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
140 MHz, 180 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
IMZ2AT108TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMZ2AT108
Manufacturer:
ROHM
Quantity:
3 000
Part Number:
IMZ2AT108
Manufacturer:
Rohm
Quantity:
8 692
Part Number:
IMZ2AT108
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Power management (dual transistors)
EMZ2 / UMZ2N / IMZ2A
1) Both a 2SA1037AK chip and 2SC2412K chip in a
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Basic ordering unit (pieces)
Feature
Equivalent circuits
Absolute maximum ratings (Ta = 25°C)
Package, marking, and packaging specifications
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
EMT or UMT or SMT package.
EMZ2 / UMZ2N
(4)
(3) (2)
Marking
Part No.
Package
Tr
Code
2
(5)
Parameter
(6)
(1)
EMZ2, UMZ2N
IMZ2A
Tr
1
EMZ2
EMT6
8000
T2R
IMZ2A
Z2
(3)
(4) (5)
Tr
2
(2)
Symbol
UMZ2N
V
V
V
UMT6
Tstg
3000
P
CBO
CEO
I
Tj
EBO
TR
Z2
C
C
(6)
(1)
Tr
1
IMZ2A
SMT6
−150
T108
3000
−60
−50
150 (TOTAL)
300 (TOTAL)
−6
Z2
−55 to +150
Tr
Limits
1
150
150
60
50
Tr
7
2
Unit
mW
mA
°C
°C
V
V
V
1
2
External dimensions (Unit : mm)
EMZ2
UMZ2N
IMZ2A
ROHM : EMT6
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
EMZ2 / UMZ2N / IMZ2A
0.3to0.6
0.1Min.
( 4 )
( 5 )
( 6 )
1.25
1.6
2.8
2.1
1.2
1.6
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Rev.A
1/4

Related parts for IMZ2AT108

IMZ2AT108 Summary of contents

Page 1

Transistors Power management (dual transistors) EMZ2 / UMZ2N / IMZ2A Feature 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. Equivalent circuits EMZ2 / UMZ2N IMZ2A (3) (2) (1) (4) (5) (6) Tr ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Tr (PNP) 1 Parameter Symbol Collector-base breakdown voltage BV CBO Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage BV EBO Collector cutoff current I CBO Emitter cutoff current I EBO Collector-emitter saturation voltage V CE(sat) DC ...

Page 3

Transistors 500 = −5V V Ta=25˚C CE −3V −1V 200 100 50 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 mA) COLLECTOR CURRENT : Fig.4 DC current gain vs. collector current (I) − =10 ...

Page 4

Transistors 500 Ta=25°C V =5V 200 100 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.13 DC current gain vs. collector current ( Ι ) 0.5 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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