NST3904DP6T5G ON Semiconductor, NST3904DP6T5G Datasheet - Page 2

• Manufacturer Part Number: NST3904DP6T5G
• Description: TRANSISTOR NPN DUAL 40V SOT-963
• Manufacturer: ON Semiconductor

Specifications of NST3904DP6T5G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 350mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 420 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NST3904DP6T5G; NST3904DP6T5GOSTR

4. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 4)
SMALL−SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 4) (I
Collector −Base Breakdown Voltage (I
Emitter −Base Breakdown Voltage (I
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product (I
Output Capacitance (V
Input Capacitance (V
Noise Figure (V
Delay Time
Rise Time
Storage Time
Fall Time
(I
(I
(I
(I
(I
(I
(I
(I
(I
0.28
0.23
0.18
0.13
0.08
0.03
C
C
C
C
C
C
C
C
C
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
Figure 1. Collector Emitter Saturation Voltage vs.
0.0001
I
C
/I
B
CE
= 10
= 5.0 Vdc, I
B
B
B
B
CE
CE
I
CE
CE
EB
0.001
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
C
CE
, COLLECTOR CURRENT (A)
CB
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 0.5 Vdc, I
= 1.0 Vdc)
Collector Current
= 5.0 Vdc, I
CE
= 30 Vdc, V
C
= 100 mAdc, R
Characteristic
(V
(I
(V
(I
C
C
B1
E
0.01
CC
CC
E
C
= 0, f = 1.0 MHz)
= 10 mAdc, I
C
= 10 mAdc, I
V
= I
= 0, f = 1.0 MHz)
= 10 mAdc, V
= 10 mAdc, I
= 3.0 Vdc, V
= 3.0 Vdc, I
CE(sat)
25°C
B2
EB
(T
A
= 1.0 mAdc)
= 3.0 Vdc)
= 25°C unless otherwise noted)
S
= 150°C
= 1.0 k W, f = 1.0 kHz)
C
C
B1
= 1.0 mAdc, I
C
0.1
E
= 0)
BE
CE
= 1.0 mAdc)
= 10 mAdc)
= 0)
−55°C
= − 0.5 Vdc)
= 20 Vdc, f = 100 MHz)
http://onsemi.com
B
= 0)
1
2
350
300
250
200
150
100
400
50
0
0.0001
Figure 2. DC Current Gain vs. Collector Current
150°C (5.0 V)
150°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
0.001
I
CE(sat)
BE(sat)
C
C
h
CEX
I
NF
C
f
obo
t
t
FE
t
t
ibo
T
d
s
r
f
, COLLECTOR CURRENT (A)
0.01
0.65
Min
100
200
6.0
40
60
40
70
60
30
−
−
−
−
−
−
−
−
−
−
−
Max
0.85
0.95
300
275
0.2
0.3
4.0
8.0
5.0
50
35
35
50
0.1
−
−
−
−
−
−
−
−
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
ns
ns
−
1