MBT3946DW1T1G ON Semiconductor, MBT3946DW1T1G Datasheet

TRANS DUAL GP 200MA 40V SC88

MBT3946DW1T1G

Manufacturer Part Number
MBT3946DW1T1G
Description
TRANS DUAL GP 200MA 40V SC88
Manufacturer
ON Semiconductor
Datasheet
1.MBT3946DW1T1G.pdf (10 pages)

Specifications of MBT3946DW1T1G

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
150mW
Frequency - Transition
300MHz, 250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V at NPN, 5 V at PNP
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Power Dissipation
150 mW
Maximum Operating Frequency
250 MHz at PNP, 300 MHz at NPN
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Collector-emitter Voltage
40V
Collector-base Voltage
60/40V
Emitter-base Voltage
6/5V
Collector Current (dc) (max)
200mA
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-88
Module Configuration
Dual
Collector Emitter Voltage V(br)ceo
40V
Transition Frequency Typ Ft
300MHz
Power Dissipation Pd
150mW
Dc Collector Current
200mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBT3946DW1T1GOSTR

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Part Number
Manufacturer
Quantity
Price
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MBT3946DW1T1G
Dual General Purpose
Transistor
SOT−23/SOT−323 three−leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−363−6
surface mount package. By putting two discrete devices in one
package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Total Package Dissipation (Note 1)
Thermal Resistance,
Junction and Storage Temperature
Range
The MBT3946DW1T1G device is a spin−off of our popular
Compliant
h
Low V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
recommended footprint.
FE
, 100−300
T
Junction−to−Ambient
A
= 25°C
CE(sat)
Characteristic
Rating
, ≤ 0.4 V
(NPN)
(NPN)
(NPN)
(NPN)
(PNP)
(PNP)
(PNP)
(PNP)
Symbol
Symbol
T
V
V
V
ESD
R
J
P
, T
CEO
CBO
EBO
I
qJA
C
D
stg
−55 to +150
Value
−200
HBM Class 2
−5.0
Max
−40
−40
200
MM Class B
150
833
6.0
40
60
1
mAdc
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
MBT3946DW1T2G
MBT3946DW1T1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
Q
(3)
(4)
1
ORDERING INFORMATION
46 = Specific Device Code
M = Date Code
G = Pb−Free Package
MARKING DIAGRAM
http://onsemi.com
SOT−363−6/SC−88
MBT3946DW1T1*
CASE 419B
(Pb−Free)
(Pb−Free)
*Q1 PNP
STYLE 1
Package
Q2 NPN
SC−88
SC−88
(5)
46 M G
Publication Order Number:
(2)
G
1
MBT3946DW1T1/D
Tape & Reel
Tape & Reel
Shipping
(1)
(6)
3000 /
3000 /
Q
2
†

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MBT3946DW1T1G Summary of contents

Page 1

... MBT3946DW1T1G Dual General Purpose Transistor The MBT3946DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space premium ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1.0 mAdc −1.0 mAdc Collector −Base Breakdown Voltage ( mAdc ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic Output Admittance ( Vdc 1.0 mAdc 1.0 kHz −10 Vdc −1.0 mAdc 1.0 kHz Noise Figure (V = 5.0 Vdc, I ...

Page 4

1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 5. Turn −On Time 500 ...

Page 5

I , COLLECTOR CURRENT (mA) C Figure 11. Current Gain 20 (NPN) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2 COLLECTOR ...

Page 6

TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1.2 (NPN 25° BE(sat) ...

Page 7

V 10.6 V 300 ns DUTY CYCLE = 2% Figure 19. Delay and Rise Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 (PNP) 7.0 C 5.0 obo C ibo 3.0 2.0 1.0 0.1 0.2 ...

Page 8

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS (V CE 5.0 SOURCE RESISTANCE = 200 1 4.0 SOURCE RESISTANCE = 200 0 3.0 SOURCE RESISTANCE = 2 2.0 ...

Page 9

TYPICAL STATIC CHARACTERISTICS 2.0 1.0 0.7 0.5 0.3 (PNP) 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 1.0 (PNP 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° ...

Page 10

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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