MBT3906DW1T1G ON Semiconductor, MBT3906DW1T1G Datasheet - Page 17

• Manufacturer Part Number: MBT3906DW1T1G
• Description: TRANS DUAL GP 200MA 40V SC88
• Manufacturer: ON Semiconductor

Specifications of MBT3906DW1T1G

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 200 mAdc
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBT3906DW1T1GOSTR

Final Product/Process Change Notification #16266
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MMSD701T1G
MMSD914T1
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MMSD914T1H
MMSD914T3G
MMSZ10T1G
MMSZ10T1H
MMSZ10T3G
MMSZ11T1
MMSZ11T1G
MMSZ12T1
MMSZ12T1G
MMSZ12T1H
MMSZ12T3G
MMSZ13T1
MMSZ13T1G
MMSZ13T1H
MMSZ15T1
MMSZ15T1G
MMSZ15T1H
MMSZ15T3G
MMSZ16T1
MMSZ16T1G
MMSZ16T1H
MMSZ18ET1G
MMSZ18T1
MMSZ18T1G
MMSZ18T1H
MMSZ18T3G
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Issue Date: 08 Jun 2009
Rev.14 Jun 2007
Page 17 of 36