IMX4T108 Rohm Semiconductor, IMX4T108 Datasheet - Page 2
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IMX4T108
Manufacturer Part Number
IMX4T108
Description
TRANS DUAL NPN 20V 50MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet
1.UMX4NTR.pdf
(4 pages)
Specifications of IMX4T108
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
50mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
500mV @ 4mA, 20mA
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 10mA, 10V
Power - Max
300mW
Frequency - Transition
1.5GHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
20V
Gain Bandwidth Ft Typ
1.5GHz
Power Dissipation Pd
300mW
Dc Collector Current
50mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
56
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IMX4T108
IMX4T108TR
IMX4T108TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IMX4T108
Manufacturer:
ROHM
Quantity:
3 656
Part Number:
IMX4T108
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Fig.4 Gain bandwidth product vs. emitter current
Electrical characteristic curves
Fig.1 DC current gain vs. collector current
Fig.7 Insertion gain vs. collector current
500
200
100
25
20
15
10
50
20
10
5000
2000
1000
5
0
500
200
100
0.5
0.1 0.2
−0.1 −0.2
COLLECTOR CURRENT : Ic (mA)
1
COLLECTOR CURRENT : I
EMITTER CURRENT : I
0.5
−0.5 −1 −2
2
1
2
5
10
5
−5 −10 −20
Ta=25°C
V
f=200MHz
10 20
CE
E
20
Ta=25°C
V
C
(mA)
=12V
(mA)
Ta=25°C
V
CE
CE
=10V
=10V
50
50
−50
Fig.2 Collector-emitter saturation voltage
Fig.8 Insertion gain vs. collector voltage
500
200
100
50
20
10
30
25
20
15
10
5
0
0.1 0.2
COLLECTOR TO EMITTER VOLTAGE : V
0
Fig.5 Collector to base time constance
50
20
10
vs. collector current
5
2
1
0.1 0.2
COLLECTOR CURRENT : I
2
vs. collector current
COLLECTOR CURRENT : I
0.5
0.5
4
1
1
2
6
2
5
8
5
Ta=25°C
I
f=200MHz
10 20
C
C
=2mA
Ta=25°C
I
C
(mA)
/I
Ta=25°C
V
f=31.8MHz
10 20
10
B
CE
C
=5
(mA)
=10V
CE
50
12
(V)
50
EMX4 / UMX4N / IMX4
Fig.3 Capacitance vs. reverse bias voltage
5.0
2.0
1.0
0.5
0.2
0.1
Fig.9 Noise factor vs. collector current
0.1 0.2
25
20
15
10
20
10
5
0
0
0.1
0.1 0.2
Fig.6 Insertion gain vs. frequency
COLLECTOR TO BASE VOLTAGE : V
0.2
COLLECTOR CURRENT : I
0.5
0.5
FREQUENCY : f (GHz)
0.5
1
1
Rev.C
2
2
1
5
2
5
Cre
Cob
10 20
Ta=25°C
V
I
Ta=25°C
V
f=200MHz
10 20
Ta=25°C
f=1MHz
I
C
E
CE
CE
=10mA
C
=0A
(mA)
=10V
=12V
5
CB
(V)
2/3
50
50
10