EMZ7T2R Rohm Semiconductor, EMZ7T2R Datasheet - Page 2
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EMZ7T2R
Manufacturer Part Number
EMZ7T2R
Description
TRANS COMPLEX BIPO NPN/PNP EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.EMZ7T2R.pdf
(5 pages)
Specifications of EMZ7T2R
Transistor Type
NPN, PNP
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
250mV @ 10mA, 200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 10mA, 2V
Power - Max
150mW
Frequency - Transition
320MHz, 260MHz
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
EMZ7T2R
EMZ7T2RTR
EMZ7T2RTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMZ7T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Tr
Tr
UMZ7N
EMZ7
Part No.
Packaging specifications
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
2
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Electrical characteristics (Ta=25 C)
(NPN)
(PNP)
Parameter
Parameter
Packaging type
Code
Basic ordering unit (pieces)
Symbol
V
Symbol
V
BV
BV
BV
BV
BV
BV
CE(sat)
Cob
Cob
I
I
I
I
CE (sat)
h
h
CBO
EBO
CBO
EBO
f
f
FE
CBO
CEO
T
FE
EBO
CBO
CEO
EBO
T
3000
TR
−
Min.
270
Min.
Taping
−15
−12
270
15
12
−6
6
−
−
−
−
−
−
−
−
−
−
8000
−100
T2R
Typ.
Typ.
320
260
7.5
6.5
90
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
Max.
−250
−0.1
−0.1
250
680
680
0.1
0.1
−
−
−
−
−
−
−
−
−
−
MHz
MHz
Unit
Unit
mV
mV
μA
μA
pF
μA
μA
pF
V
V
V
−
V
V
V
−
I
I
I
V
V
I
V
V
V
C
C
E
C
I
I
I
V
V
I
V
V
V
C
C
E
C
= 10μA
CB
EB
CE
CE
CB
= 10μA
= 1mA
/I
CB
EB
CE
CE
CB
= −10μA
= −10μA
= −1mA
/I
B
= 15V
= 6V
/I
= 2V, I
= 10V, I
B
= 200mA /10mA
= −15V
= −6V
/I
= −2V, I
= −10V, I
= −200mA/−10mA
C
C
= 2V/10mA
= −2V/−10mA
C
= −10mA, f = 100MHz
E
Conditions
C
Conditions
= 0A, f = 1MHz
= 10mA, f = 100MHz
E
= 0A, f = 1MHz
EMZ7 / UMZ7N
Rev.A
2/4