IMX3T108 Rohm Semiconductor, IMX3T108 Datasheet

TRANS DUAL NPN 50V 150MA SOT-457

IMX3T108

Manufacturer Part Number
IMX3T108
Description
TRANS DUAL NPN 50V 150MA SOT-457
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of IMX3T108

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Package / Case
SC-74-6
Module Configuration
Dual
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
180MHz
Power Dissipation Pd
300mW
Dc Collector Current
150mA
Operating Temperature
RoHS Compliant
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IMX3T108
IMX3T108TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IMX3T108
Manufacturer:
ROHM
Quantity:
8 000
Transistors
General purpose (dual transistors)
EMX3 / UMX3N / IMX3
1) Two 2SC2412AK chips in a EMT or UMT or SMT
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Basic ordering unit (pieces)
Features
Equivalent circuits
Absolute maximum ratings (Ta=25°C)
Package, marking, and packaging specifications
package.
Tr
EMX3 / UMX3N
(4)
2
(3)
Package
Marking
(5)
Code
(2)
Type
Parameter
(6)
Tr
(1)
1
EEMX3 / UMX3N
IMX3
Tr
(3)
IMX3
2
(4)
(2)
EMX3
EMT6
(5)
8000
T2R
X3
Symbol
(1)
(6)
Tr
V
V
V
Tstg
1
P
CBO
CEO
Tj
EBO
I
C
C
UMX3N
UMT6
3000
X3
TR
150(TOTAL)
300(TOTAL)
−55 to +150
Limits
150
150
60
50
7
SMT6
IMX3
T108
3000
X3
Unit
mW
mA
°C
°C
V
V
V
∗2
∗1
External dimensions (Unit : mm)
EMX3
ROHM : EMT6
UMX3N
ROHM : UMT6
EIAJ : SC-88
IMX3
ROHM : SMT6
EIAJ : SC-74
EMX3 / UMX3N / IMX3
0.3Min.
0.1Min.
( 4 )
( 5 )
( 6 )
1.2
1.6
1.6
2.8
1.25
2.1
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
Rev.A
1/3

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IMX3T108 Summary of contents

Page 1

Transistors General purpose (dual transistors) EMX3 / UMX3N / IMX3 Features 1) Two 2SC2412AK chips in a EMT or UMT or SMT package. Equivalent circuits EMX3 / UMX3N IMX3 (3) (2) (1) (4) (5) ( ...

Page 2

Transistors Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ∗Transition frequency of the device. Electrical characteristics curves 50 ...

Page 3

Transistors 0 = 0.2 Ta=100°C 0.1 25°C −55°C 0.05 0.02 0.01 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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