FMY1AT148 Rohm Semiconductor, FMY1AT148 Datasheet

TRANS NPN/PNP 50V 150MA SMT5

FMY1AT148

Manufacturer Part Number
FMY1AT148
Description
TRANS NPN/PNP 50V 150MA SMT5
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of FMY1AT148

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
300mW
Frequency - Transition
180MHz, 140MHz
Mounting Type
Surface Mount
Package / Case
SC-74-5, SOT-753
Module Configuration
Dual
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
180MHz
Power Dissipation Pd
300mW
Dc Collector Current
150mA
Operating
RoHS Compliant
Configuration
Dual Common Emitter
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 50 V / + 50 V
Emitter- Base Voltage Vebo
- 6 V, + 7 V
Continuous Collector Current
- 150 mA / + 150 mA
Maximum Dc Collector Current
0.15 A
Power Dissipation
300 mW
Maximum Operating Frequency
180 MHz at NPN, 140 MHz at PNP
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
120
Gain Bandwidth Product Ft
140 MHz, 180 MHz
Dc Current Gain Hfe
120
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
FMY1AT148
FMY1AT148TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FMY1AT148
Manufacturer:
Rohm
Quantity:
16 236
Part Number:
FMY1AT148
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
Emitter common (dual transistors)
EMY1 / UMY1N / FMY1A
1) Includes a 2SA1037AK and a 2SC2412K transistor in
2) PNP and NPN transistors have common emitters.
3) Mounting cost and area can be cut in half.
Epitaxial planar type
PNP / NPN silicon transistor
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
a EMT or UMT or SMT package.
EMY1 / UMY1N
(4)
Parameter
(3)
Tr
2
EMY1, UMY1N
FMY1A
(2)
(5)
(1)
Tr
1
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
FMY1A
C
C
(2)
Tr
(3)
2
150 (TOTAL)
300 (TOTAL)
−150
−55 to +150
−60
−50
Tr
−6
(4)
Limits
1
150
(1)
Tr
(5)
150
1
Tr
60
50
7
2
∗1
∗2
Unit
mW
mA
°C
°C
V
V
V
External dimensions (Unit : mm)
EMY1
ROHM : EMT5
UMY1N
ROHM : UMT5
EIAJ : SC-88A
ROHM : SMT5
EIAJ : SC-74A
FMY1A
0.3to0.6
Abbreviated symbol : Y1
Abbreviated symbol : Y1
Abbreviated symbol : Y1
0.1Min.
EMY1 / UMY1N / FMY1A
(4)
(5)
1.25
1.6
2.8
2.1
1.2
1.6
Each lead has same dimensions
Each lead has same dimensions
(3)
(2)
(1)
Each lead has same dimensions
Rev.A
1/4

Related parts for FMY1AT148

FMY1AT148 Summary of contents

Page 1

Transistors Emitter common (dual transistors) EMY1 / UMY1N / FMY1A Features 1) Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. 2) PNP and NPN transistors have common emitters. 3) Mounting cost and area ...

Page 2

Transistors Electrical characteristics (Ta = 25°C) Tr (PNP) 1 Parameter Symbol Collector-base breakdown voltage BV CBO Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage BV EBO Collector cutoff current I CBO Emitter cutoff current I EBO Collector-emitter saturation voltage V ...

Page 3

Transistors 500 V =−5V Ta=25˚C CE −3V −1V 200 100 50 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 (mA) COLLECTOR CURRENT : I C Fig.4 DC current gain vs. collector current ( I ) − =10 ...

Page 4

Transistors 500 Ta=25˚C V =5V 200 100 0.2 0 100 200 (mA) COLLECTOR CURRENT : I C Fig.13 DC current gain vs. collector current ( I ) 0.5 ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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